Tegal
6550
The Tegal 6550 is a plasma etch reactor. The Tegal 6550 is used for etching non-volatile metal and metal oxide films. The Tegal 6550 Spectra has a wafer size range of 100mm to 200mm.[1][2]
Wafer size
100mm
Introduced
2000
What it is
How it works
Where it fits in the process flow
The Tegal 6550 is used for volume production of magnetic memory components and related microelectronics devices.[1]
Applications
The Tegal 6550 is used for etching non-volatile metal and metal oxide films.[1][2]
The Tegal 6550 is targeted for MRAM, GMR, and FeRAM device fabrication.[1][3][2]
The Tegal 6550 is targeted for magnetic thin films including NiFe, CoFe, and FeN, and for alumina dielectric gap films.[3][2]
- MRAM
- GMR devices
- FeRAM
- data storage
- next-generation system-on-a-chip applications
- telecommunications
- magnetic storage
- magnetic head and MRAM memory device technology
Why won't it start?
Documented failure modes, common issues, and field considerations.
- The deposition shield was stated to address redeposition of wafer processing materials on reactor interior surfaces that can degrade power transfer, etch rate, uniformity, uptime, and throughput.
- The rinse-strip-rinse feature was stated to eliminate corrosion in MRAM, GMR, and thin magnetic-material fabrication.
What do the numbers mean?
Wafer handling1
Configuration & options16
Vintage & configurations
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| 6550 Spectra | — | 2000 | Described as the 6550 Spectra etch reactor/system with Spectra plasma source, dual-chamber platform, and rinse-strip-rinse capability. | web.archive.org[2] |
What replaced it?
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What kinds of films can this class of etch system process?General reference — not yet source-verified
The etch capability depends on the process chemistry and chamber design. Such systems can be set up to etch dielectrics, metals, semiconductors, and sacrificial layers by selecting appropriate gases and operating conditions.
How is the etch process controlled and monitored?General reference — not yet source-verified
Operators control chamber pressure, gas flow, plasma power, and wafer temperature. Endpoint detection methods are commonly used to monitor the etch process and determine when the desired material has been removed.
What factors influence etch uniformity?General reference — not yet source-verified
Etch uniformity depends on chamber geometry, gas flow distribution, plasma density, and temperature control. Proper chamber conditioning and routine maintenance help maintain consistent results across the wafer and from run to run.
What routine maintenance is typical for plasma etch systems?General reference — not yet source-verified
Routine maintenance includes cleaning chamber walls, replacing consumable components such as focus rings and electrodes, and verifying mass flow controllers, pressure gauges, and temperature sensors.
Not publicly documented
The following facts about the 6550 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
The control-system platform and OS era of the 6550 are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the 6550 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 6550 are on record.
Answerable by: an OEM parts catalog or a service engineer
No publicly hosted manuals, SOPs, or datasheets for the 6550 are on record.
Answerable by: university cleanroom staff or an OEM application specialist
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]web.archive.org — web.archive.orgweb.archive.org
- [2]web.archive.org — web.archive.orgweb.archive.org
- [3]web.archive.org — web.archive.orgweb.archive.org
- [4]web.archive.orgweb.archive.org
Last updated Oct 5, 2026.
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