Comparison ledger
Tegal 6520, Tegal 6550, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6520Tegal | 6550Tegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | 2001 | 2000 |
| Production run | 2001– | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2001 Order announcement | 2000 Patent announcement · 2001 Order announced |
| Control system | — | — |
| Generation | — | — |
| Family | Tegal 6520 | Tegal 6550 |
| Cited variants | — |
|
| Specifications | ||
| Tool type | high-density CCP plasma etch tool[2] | — |
| RF power | dual-frequency RF power application[2] | — |
| Plasma confinement | magnetic plasma confinement[2] | — |
| Wafer size | 100mm – 200mm[2] | 100mm–200mm[1] |
| Process capability | Rinse-Strip-Rinse (RSR)[3] | patented rinse-strip-rinse feature / process capability[5] |
| Product type | — | etch reactor / plasma etch system[5] |
| Process target | — | non-volatile metal and metal oxide films[5] |
| Primary application | — | volume production of magnetic memory components such as MRAM and GMR devices[5] |
| Platform | — | full cluster tool technology[5] |
| Chamber configuration | — | dual-chamber platform[6] |
| Plasma source | — | patented next-generation dual-frequency plasma source technology[5] |
| Plasma source (later material) | — | Spectra plasma source[6] |
| Available option | — | deposition shield[5] |
| Type | — | plasma etch reactor[5] |
| Processes | — | etching non-volatile metal and metal oxide films[5] |
| Plasma source technology | — | patented next-generation, dual-frequency plasma source technology[5] |
| Variant | — | Spectra plasma source[6] |
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