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STS

Multiplex ICP

Etch100mmSTS Multiplex ICP family
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The STS Multiplex ICP is an inductively coupled plasma etch system that etches insulators, silicon, metals, and some polymers. The STS Multiplex ICP uses an ICP source with an RF power supply at 13.56 MHz and provides a substrate bias via a 300 W maximum RF generator. The STS Multiplex ICP offers an electrostatic clamping and biasing chuck controlled at 20°C, adaptable for 4-inch and 6-inch wafers.[1]

Multiplex ICP — cores.research.asu.edu
Fig. 01Multiplex ICPcores.research.asu.edu[2]

  • Plate 01STS Multiplex ICP Etcher #58180

    Bid ServicellcWatch on YouTube

  • Plate 02SPTS STS MULTIPLEX ICP STANDALONE SYSTEM used semiconductor equipment

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  • Plate 03Video 1 of 4 - STS Multiplex ICP AOE Etcher (ID# 3457) - Turn On & Pump Down

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  • Plate 04Surface Tech Sys Multiplex ICP Semiconductor Equipment

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  • Plate 05Surface Tech Sys Cluster ASE AOE Multiplex ICP

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  • Plate 06STS SPTS Multiplex ICP HRM Etcher used semiconductor equipment

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  • Plate 07Video 3 of 4 - STS Multiplex ICP AOE Etcher (ID# 3457) - Leak Rates

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  • Plate 08Video 4 of 4 - STS Multiplex ICP AOE Etcher (ID# 3457) - Plasma

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Wafer size

100mm

Power

0–900 Watts[2]

Vacuum

< 90 mTorr[2]

Performance

0.2 to 0.5 um/min[1]

Gas delivery

SF6, C4F8, O2, Ar[2]

What it is

The STS Multiplex ICP is an ICP plasma etcher. The STS Multiplex ICP at CMU uses a four wafer carousel and supports four inch wafers. The STS Multiplex ICP at EPFL is a microelectronic compatible tool for metal etching, deep polymer etching, and silicon, silicon dioxide, and silicon nitride thin film etching.[6][4]

How it works

The STS Multiplex ICP at CMU uses inductively coupled plasma RIE. The STS Multiplex ICP at CMU has a 1200 W coil power supply and a 300 W platen power supply. The STS Multiplex ICP at ASU is a load locked inductively coupled plasma etch system that uses sulfur hexafluoride, octafluorocyclobutane, oxygen, and argon process gases.[6][2]

Where it fits in the process flow

The STS Multiplex ICP at ASU is used for deep silicon etching. The STS Multiplex ICP at EPFL is used for metals etching and for thin film etching in silicon, silicon dioxide, and silicon nitride. The STS Multiplex ICP at EPFL also supports deep polymer etching.[2][4]

Applications

The STS Multiplex ICP supports anisotropic silicon etching for Bosch process work. The STS Multiplex ICP supports isotropic silicon etching at CMU. The STS Multiplex ICP at EPFL supports metals etching, deep polymer etching, and thin film etching of silicon, silicon dioxide, and silicon nitride.[6][4]

  • deep silicon etching
  • Bosch process etching

What do the numbers mean?

Power & electrical7

ICP power range
0–900 Watts[2]
Accurate?
Bias power range
0–30 Watts[2]
Accurate?
RF Frequency (ICP source)
13.56 MHz[1]
Accurate?
Max RF generator power
300 W[1]
Accurate?
Substrate holder RF biasing power
300 W maximum[1]
Accurate?
Bias RF power maximum
300 W maximum[1]
Accurate?
ICP source
Antenna connected to an RF power supply and wrapped around an alumina cylinder[1]
Accurate?

Vacuum & pumping4

Pressure range
< 90 mTorr[2]
Accurate?
Load Lock Type
Transfer loadlock with high vacuum during loading/unloading[1]
Accurate?
Pumping system
1000 l/s turbo pump[1]
Accurate?
Base pressure (without process)
few 10^-7 mb[1]
Accurate?

Wafer handling14

Wafer size
100 mm wafers[2]3 sources
Accurate?
Carrier requirement
Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[2]
Accurate?
Wafer Size
4 inches and 6 inches wafers[1]
Accurate?
Substrate Bias Power (maximum)
300 W[1]
Accurate?
Substrate Chuck Temperature
20°C[1]
Accurate?
Substrate Clamping
Electrostatic clamping[1]
Accurate?
Wafer handling
smaller wafers and irregularly shaped samples placed on a 100 mm carrier[2]
Accurate?
Wafer handling
smaller than 100 mm wafers and irregularly shaped samples placed on a 100 mm carrier[2]
Accurate?
Chuck
biasing chuck controlled in temperature[1]
Accurate?
Wafer sizes supported
4 inches and 6 inches[1]
Accurate?
Wafer size
100 mm (also adaptable for 4-inch and 6-inch)[1]
Accurate?
Wafer clamping
Electrostatic clamping with helium backside cooling[1]
Accurate?
Chuck type
Electrostatic clamping and biasing chuck[1]
Accurate?
Wafer compatibility
Adaptable for 4 inches and 6 inches wafers[1]
Accurate?

Gas & chemistry11

Process gases
SF6, C4F8, O2, Ar[2]
Accurate?
MFC flow range - SF6
0–300 sccm[2]
Accurate?
MFC flow range - C4F8
0–200 sccm[2]
Accurate?
MFC flow range - O2
0–100 sccm[2]
Accurate?
MFC flow range - Ar
0–100 sccm[2]
Accurate?
Selectivity to photoresist
50:1[2]
Accurate?
Mask materials
photoresist and silicon dioxide (SiO2)[2]
Accurate?
Number of gas MFCs
8[1]
Accurate?
Process gases
O2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[1]
Accurate?
Polyimide etch rate (oxygen chemistry)
>1 um/min[1]
Accurate?
Chemistry
chlorine and bromine chemistry[4]
Accurate?

Performance2

Al etch rate (standard Cl2/BCl3 process)
0.2 to 0.5 um/min[1]
Accurate?
Si etch rate (standard Cl2 process)
0.35 um/min[1]
Accurate?

Control & software5

Temperature control
20°C[1]
Accurate?
Control software
entirely computer controlled[1]
Accurate?
Temperature control
Thermostat liquid circulation[1]
Accurate?
Temperature control
Controlled in temperature at 20°C[1]
Accurate?
Control
Entirely computer controlled[1]
Accurate?

Configuration & options22

Tool type
load-locked, inductively coupled plasma etch system[2]2 sources
Accurate?
Process
deep silicon etching using the Bosch process[2]
Accurate?
Platen size
100 mm[2]
Accurate?
Backside cooling
Helium[2]
Accurate?
Clamping
Clamped[2]
Accurate?
Selectivity to wet thermal SiO2
100:1[2]
Accurate?
Typical repeatable aspect ratio
10:1[2]
Accurate?
OEM
STS[1]
Accurate?
Model
Multiplex ICP[1]
Accurate?
Plasma Type
Inductively Coupled Plasma (ICP)[1]
Accurate?
Materials Etched
Insulators (SiO2, Si3N4, SiC), silicon, metals (Al Alloys, Pt, Ti), some polymers[1]
Accurate?
Type
load-locked inductively coupled plasma etch system[2]
Accurate?
Applications
etching insulators, silicon, metals, and some polymers[1]
Accurate?
Dedicated etch materials at CMi
metals, quartz, and polyimide[1]
Accurate?
Clamping
electrostatic clamping[1]
Accurate?
Endpoint detection
fitted with an End Point Detection (EPD) system[1]
Accurate?
End Point Detection
Yes[1]
Accurate?
Etching materials (general)
Insulators (SiO2, Si3N4, SiC), silicon, metals (Al alloys, Pt, Ti), polymers[1]
Accurate?
Tool type
ICP plasma etcher[4]
Accurate?
Compatibility
microelectronic compatible equipment[4]
Accurate?
Applications
metals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[4]
Accurate?
End point detection
End Point Detection (EPD) system[1]
Accurate?

Vintage & configurations

Control-system eraDOS[1]

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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Process gasesSF6, C4F8, O2, Ar[2]
  • ICP power range0–900 Watts[2]
  • Bias power range0–30 Watts[2]
  • MFC flow range - SF60–300 sccm[2]
  • MFC flow range - C4F80–200 sccm[2]
  • MFC flow range - O20–100 sccm[2]
  • MFC flow range - Ar0–100 sccm[2]
  • Pressure range< 90 mTorr[2]
  • Selectivity to photoresist50:1[2]
  • RF Frequency (ICP source)13.56 MHz[1]
  • Load Lock TypeTransfer loadlock with high vacuum during loading/unloading[1]
  • Mask materialsphotoresist and silicon dioxide (SiO2)[2]
  • Max RF generator power300 W[1]
  • Substrate holder RF biasing power300 W maximum[1]
  • Number of gas MFCs8[1]
  • Process gasesO2 (100sccm), O2 (10sccm), SF6, CF4, BCl3, Ar, Cl2, HBr[1]
  • Pumping system1000 l/s turbo pump[1]
  • Base pressure (without process)few 10^-7 mb[1]
  • Polyimide etch rate (oxygen chemistry)>1 um/min[1]
  • Chemistrychlorine and bromine chemistry[4]
  • Bias RF power maximum300 W maximum[1]
  • ICP sourceAntenna connected to an RF power supply and wrapped around an alumina cylinder[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What wafer sizes does the STS Multiplex ICP support at EPFL's CMi facility?

The electrostatic chuck is adaptable for 4-inch (100 mm) and 6-inch (150 mm) wafers.[1]

What is the maximum RF bias power on the substrate holder of this system?

The substrate holder biasing RF generator has a maximum power of 300 W.[1]

What is the operating pressure range for this ICP etcher?

The system operates at low pressure, in the range of 0.1 to 20 Pa (approximately 0.75 to 150 mTorr).[1]

Does the system have end-point detection capability?

Yes, the machine is fitted with an End Point Detection (EPD) system.[1]

Not publicly documented

The following facts about the Multiplex ICP are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Multiplex ICP are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Multiplex ICP are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • No publicly documented failure modes or field errata for the Multiplex ICP are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Multiplex ICP is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the Multiplex ICP are on record.

    Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (6)Every fact above is drawn from these public sources
  1. [1]epfl.chepfl.ch
  2. [2]cores.research.asu.edu — cores.research.asu.educores.research.asu.edu
  3. [3]wcnt.wisc.eduwcnt.wisc.edu
  4. [4]epfl.ch — epfl.chepfl.ch
  5. [5]epfl.chepfl.ch
  6. [6]STS Multiplex ICP RIE - Claire & John Bertucci Nanotechnology Laboratory - College of Engineering - Carnegie Mellon Univ — nanofab.ece.cmu.edunanofab.ece.cmu.edu
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Last updated Oct 8, 2026.

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