Comparison ledger
Oxford Instruments PlasmaPro100, STS Multiplex ICP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | PlasmaPro100Oxford Instruments | |
|---|---|---|
| OEM | Oxford Instruments | STS |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | DOS |
| Generation | — | — |
| Family | Oxford Instruments PlasmaPro100 | STS Multiplex ICP |
| Specifications | ||
| OEM | Oxford[2] | STS[3] |
| Model | PlasmaPro100[2] | Multiplex ICP[3] |
| Equipment type | dry etcher[2] | — |
| Plasma source | ICP plasma etcher[2] | — |
| Wafer size | 100mm wafers[2] | 100 mm wafers[1] |
| Chemistry | chlorine and bromine chemistry[2] | chlorine and bromine chemistry[2] |
| Clamping | electrostatic clamping[2] | Clamped[1] |
| Compatibility | microelectronic compatible equipment[2] | microelectronic compatible equipment[2] |
| Applications | metals etching; deep polymer etching; Si, SiO2 and Si3N4 thin films etching[2] | etching insulators, silicon, metals, and some polymers[3] |
| Endpoint detection | laser reflectometry/interferometry and optical emission spectroscopy (EOS) endpoint detection[2] | fitted with an End Point Detection (EPD) system[3] |
| Tool type | ICP plasma etcher[2] | load-locked, inductively coupled plasma etch system[1] |
| End-point detection | laser reflectometry/interferometry end-point-detection[2] | — |
| Process | — | deep silicon etching using the Bosch process[1] |
| Process gases | — | SF6, C4F8, O2, Ar[1] |
| Carrier requirement | — | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1] |
| Platen size | — | 100 mm[1] |
| ICP power range | — | 0–900 Watts[1] |
| Bias power range | — | 0–30 Watts[1] |
| MFC flow range - SF6 | — | 0–300 sccm[1] |
| MFC flow range - C4F8 | — | 0–200 sccm[1] |
| MFC flow range - O2 | — | 0–100 sccm[1] |
| MFC flow range - Ar | — | 0–100 sccm[1] |
| Pressure range | — | < 90 mTorr[1] |
| Backside cooling | — | Helium[1] |
| Selectivity to photoresist | — | 50:1[1] |
| Selectivity to wet thermal SiO2 | — | 100:1[1] |
| Typical repeatable aspect ratio | — | 10:1[1] |
| Wafer Size | — | 4 inches and 6 inches wafers[3] |
| Plasma Type | — | Inductively Coupled Plasma (ICP)[3] |
| RF Frequency (ICP source) | — | 13.56 MHz[3] |
| Substrate Bias Power (maximum) | — | 300 W[3] |
| Substrate Chuck Temperature | — | 20°C[3] |
| Substrate Clamping | — | Electrostatic clamping[3] |
| Load Lock Type | — | Transfer loadlock with high vacuum during loading/unloading[3] |
| Materials Etched | — | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al Alloys, Pt, Ti), some polymers[3] |
| Type | — | load-locked inductively coupled plasma etch system[1] |
| Wafer handling | — | smaller wafers and irregularly shaped samples placed on a 100 mm carrier[1] |
| Mask materials | — | photoresist and silicon dioxide (SiO2)[1] |
| Dedicated etch materials at CMi | — | metals, quartz, and polyimide[3] |
| Chuck | — | biasing chuck controlled in temperature[3] |
| Temperature control | — | 20°C[3] |
| Wafer sizes supported | — | 4 inches and 6 inches[3] |
| Max RF generator power | — | 300 W[3] |
| Control software | — | entirely computer controlled[3] |
| Substrate holder RF biasing power | — | 300 W maximum[3] |
| Number of gas MFCs | — | 8[3] |
| Pumping system | — | 1000 l/s turbo pump[3] |
| Base pressure (without process) | — | few 10^-7 mb[3] |
| Wafer clamping | — | Electrostatic clamping with helium backside cooling[3] |
| End Point Detection | — | Yes[3] |
| Etching materials (general) | — | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al alloys, Pt, Ti), polymers[3] |
| Al etch rate (standard Cl2/BCl3 process) | — | 0.2 to 0.5 um/min[3] |
| Si etch rate (standard Cl2 process) | — | 0.35 um/min[3] |
| Polyimide etch rate (oxygen chemistry) | — | >1 um/min[3] |
| Chuck type | — | Electrostatic clamping and biasing chuck[3] |
| Wafer compatibility | — | Adaptable for 4 inches and 6 inches wafers[3] |
| Control | — | Entirely computer controlled[3] |
| End point detection | — | End Point Detection (EPD) system[3] |
| Bias RF power maximum | — | 300 W maximum[3] |
| ICP source | — | Antenna connected to an RF power supply and wrapped around an alumina cylinder[3] |
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