Comparison ledger
STS Multiplex ICP, Tegal 6520, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 6520Tegal | |
|---|---|---|
| OEM | STS | Tegal |
| Category | Etch | Etch |
| Wafer size | 100mm | 100mm |
| Process node | — | — |
| Introduced | — | 2001 |
| Production run | — | 2001– |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2001 Order announcement |
| Control system | DOS | — |
| Generation | — | — |
| Family | STS Multiplex ICP | Tegal 6520 |
| Specifications | ||
| Tool type | load-locked, inductively coupled plasma etch system[1] | high-density CCP plasma etch tool[4] |
| Process | deep silicon etching using the Bosch process[1] | — |
| Process gases | SF6, C4F8, O2, Ar[1] | — |
| Wafer size | 100 mm wafers[1] | 100mm – 200mm[4] |
| Carrier requirement | Wafers smaller than 100 mm and irregularly shaped samples must be placed on a 100 mm carrier[1] | — |
| Platen size | 100 mm[1] | — |
| ICP power range | 0–900 Watts[1] | — |
| Bias power range | 0–30 Watts[1] | — |
| MFC flow range - SF6 | 0–300 sccm[1] | — |
| MFC flow range - C4F8 | 0–200 sccm[1] | — |
| MFC flow range - O2 | 0–100 sccm[1] | — |
| MFC flow range - Ar | 0–100 sccm[1] | — |
| Pressure range | < 90 mTorr[1] | — |
| Backside cooling | Helium[1] | — |
| Clamping | Clamped[1] | — |
| Selectivity to photoresist | 50:1[1] | — |
| Selectivity to wet thermal SiO2 | 100:1[1] | — |
| Typical repeatable aspect ratio | 10:1[1] | — |
| OEM | STS[2] | — |
| Model | Multiplex ICP[2] | — |
| Wafer Size | 4 inches and 6 inches wafers[2] | — |
| Plasma Type | Inductively Coupled Plasma (ICP)[2] | — |
| RF Frequency (ICP source) | 13.56 MHz[2] | — |
| Substrate Bias Power (maximum) | 300 W[2] | — |
| Substrate Chuck Temperature | 20°C[2] | — |
| Substrate Clamping | Electrostatic clamping[2] | — |
| Load Lock Type | Transfer loadlock with high vacuum during loading/unloading[2] | — |
| Materials Etched | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al Alloys, Pt, Ti), some polymers[2] | — |
| Type | load-locked inductively coupled plasma etch system[1] | — |
| Wafer handling | smaller wafers and irregularly shaped samples placed on a 100 mm carrier[1] | — |
| Mask materials | photoresist and silicon dioxide (SiO2)[1] | — |
| Applications | etching insulators, silicon, metals, and some polymers[2] | — |
| Dedicated etch materials at CMi | metals, quartz, and polyimide[2] | — |
| Chuck | biasing chuck controlled in temperature[2] | — |
| Temperature control | 20°C[2] | — |
| Wafer sizes supported | 4 inches and 6 inches[2] | — |
| Max RF generator power | 300 W[2] | — |
| Control software | entirely computer controlled[2] | — |
| Endpoint detection | fitted with an End Point Detection (EPD) system[2] | — |
| Substrate holder RF biasing power | 300 W maximum[2] | — |
| Number of gas MFCs | 8[2] | — |
| Pumping system | 1000 l/s turbo pump[2] | — |
| Base pressure (without process) | few 10^-7 mb[2] | — |
| Wafer clamping | Electrostatic clamping with helium backside cooling[2] | — |
| End Point Detection | Yes[2] | — |
| Etching materials (general) | Insulators (SiO2, Si3N4, SiC), silicon, metals (Al alloys, Pt, Ti), polymers[2] | — |
| Al etch rate (standard Cl2/BCl3 process) | 0.2 to 0.5 um/min[2] | — |
| Si etch rate (standard Cl2 process) | 0.35 um/min[2] | — |
| Polyimide etch rate (oxygen chemistry) | >1 um/min[2] | — |
| Chemistry | chlorine and bromine chemistry[3] | — |
| Compatibility | microelectronic compatible equipment[3] | — |
| Chuck type | Electrostatic clamping and biasing chuck[2] | — |
| Wafer compatibility | Adaptable for 4 inches and 6 inches wafers[2] | — |
| Control | Entirely computer controlled[2] | — |
| End point detection | End Point Detection (EPD) system[2] | — |
| Bias RF power maximum | 300 W maximum[2] | — |
| ICP source | Antenna connected to an RF power supply and wrapped around an alumina cylinder[2] | — |
| RF power | — | dual-frequency RF power application[4] |
| Plasma confinement | — | magnetic plasma confinement[4] |
| Process capability | — | Rinse-Strip-Rinse (RSR)[5] |
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