Varian
350D
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Varian 350D is a medium current ion implanter used for doping semiconductor wafers. The Varian 350D can implant boron (B11 or BF2) and phosphorus (P31) into 4-inch or 6-inch wafers. The Varian 350D has an implant energy range of 10 keV to 200 keV and a dose range of 1E12 to 5E15 ions/cm².[1][2]
What it is
Ion implanters are equipment used to dope semiconductor wafers by introducing dopant ions into the crystal lattice. The Varian 350D is a medium-current ion implanter designed for this purpose. The Varian 350D was considered an industry standard and was the tool of choice during the early 1980s.[1]
How it works
General reference — not yet source-verifiedIon implanters generate a beam of ions from a source, accelerate the ions to a desired energy, and scan the beam across the wafer surface. The Varian 350D class of medium-current implanters typically employs a beamline that filters and focuses the ion beam before implantation. End stations hold wafers during implantation and may include mechanisms for loading, alignment, and dose monitoring.
Where it fits in the process flow
General reference — not yet source-verifiedIon implantation is a critical step in semiconductor fabrication used to introduce precise amounts of dopants into specific regions of a wafer. The process typically occurs after lithography and etching steps that define the areas to be doped. After implantation, wafers undergo annealing to activate the dopants and repair crystal damage.
What do the numbers mean?
Wafer handling2
Configuration & options8
- Relationship to 300 XP
- industry-standard predecessor platform that the 300 XP evolved from[1]
Vintage & configurations
- 1986Production start[1]
The 300 XP was introduced in 1986 and evolved from the Varian 350D.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the typical energy range of a medium-current ion implanter like this?General reference — not yet source-verified
Medium-current implanters generally cover an energy range from a few tens of keV up to several hundred keV, allowing them to handle a variety of implant depths. The exact range depends on the specific design and generation of the machine.
How does the machine ensure uniform doping across the wafer?General reference — not yet source-verified
Uniformity is achieved through beam scanning (electrostatic or mechanical) combined with precise wafer positioning. The machine monitors beam current and adjusts scanning speed or dose in real time to maintain a consistent implant profile across the entire wafer surface.
What are common maintenance requirements for such a system?General reference — not yet source-verified
Key maintenance includes periodic replacement of the ion source filament and components, cleaning of beamline apertures and electrodes, vacuum system upkeep (pump oil changes, leak checking), and calibration of dosimetry and scanning systems. Preventive maintenance intervals are typically scheduled based on accumulated beam-on time or wafer counts.
Is this machine suitable for shallow junction implants?General reference — not yet source-verified
Medium-current implanters are generally not optimized for the very low energies (below a few keV) required for ultra-shallow junctions. For such applications, dedicated low-energy or high-current low-energy implanters are typically used. However, this class can still perform moderately shallow implants through deceleration modes or by using molecular species with lower effective energy per atom.
Not publicly documented
The following facts about the 350D are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented variants, configuration options, or revision breakpoints of the 350D are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 350D are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 350D are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 350D is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the 350D are on record.
Answerable by: an OEM parts catalog or a service engineer
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]web.archive.org — web.archive.orgweb.archive.org
- [2]yumpu.com — yumpu.comyumpu.com
- [3]Varian 350D Ion Implanter User Manual | ManualLib - Manual Library — manuallib.commanuallib.com
- [4]Varian 350D Implanter - Semiconductor Nanofabrication Laboratory - Confluence — rit-its.atlassian.netrit-its.atlassian.net
Last updated Oct 5, 2026.
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