Tokyo Electron
Unity Me
The Tokyo Electron Unity Me is an automatic plasma etching production tool using a Dipole Ring Magnet (DRM) chamber. The TEL Unity Me is optimized for etching dielectrics including SiO2 and SiN on 100mm wafers.[1]
What it is
The Tokyo Electron Unity Me is an automatic plasma etching production tool built by Tokyo Electron (TEL). The system at the Center of MicroNanoTechnology (CMi) at EPFL is configured with a cassette loader for one hundred millimeter wafers, a transfer chamber, and a DRM (Dipole Ring Magnet) process module. The DRM chamber is dedicated to etching dielectric films such as silicon dioxide and silicon nitride.[1]
How it works
The DRM chamber is a reactive ion etching (RIE) chamber that uses a magnetic field to enhance the plasma. The dipole ring magnet creates a magnetic field that increases ion density and allows lower pressure operation, improving etch anisotropy and rate.[1]
Where it fits in the process flow
General reference — not yet source-verifiedIn a semiconductor fabrication flow, a dielectric etcher like the Unity Me is used after lithography to transfer patterns into a dielectric layer such as silicon dioxide or silicon nitride. The etched features typically serve as contact holes, vias, or trench isolation structures. Downstream steps include resist stripping, cleaning, and subsequent deposition or metallization.
What can it run?
Process applications and technology nodes documented for this tool.
- Dielectric etching
- SiO2 etching
- SixNy etching
Why won't it start?
Documented failure modes, common issues, and field considerations.
- The TEL etcher must not be exposed to metallics or traces of metallics.
- Wafers previously in contact with metallic layers, including buried layers, must not be loaded.
- Wafers processed in the SPTS APS etcher are not allowed in the TEL Unity etcher.
What do the numbers mean?
Wafer handling10
- Unavailable modules at EPFL CMi
- C2 cassette loader and P2 SCCM (Super Capacitively Coupled Module) process chamber are offline[1]
- Metallic contamination restriction
- The TEL etcher must NOT be exposed to any metallics or even traces of metallics; wafers once in contact with metallics must not be loaded[1]
Gas & chemistry16
- Process gases
- C4F8 (30 sccm), CF4 (100 sccm), CHF3 (100 sccm), CH2F2 (100 sccm), O2 (30 sccm and 1000 sccm), N2 (100 sccm), Ar (1000 sccm)[1]
- Process: CMI.BARC (BARC open)
- Gap: 47 mm, SH temp: 40°C, Chemistry: CF4, Mask: JSR M108Y, JSR M35G, DUV42P; Etch rates: DUV42P 110 nm/min, M108Y/M35G 110 nm/min, SiO2 170 nm/min, Si 85 nm/min; Selectivity 1:1[1]
- Process: CMI.OX.PR (SiO2 etch with PR mask)
- Gap: 47 mm, SH temp: 40°C, Chemistry: C4F8 O2 Ar, Mask: PR; Etch rates: SiO2 440 nm/min @600W, 230 @500W, 200 @400W, 160 @300W, 125 @200W, 85 @100W; Selectivity >3:1[1]
- Process: CMI.OX.ASI (SiO2 etch with aSi mask)
- Gap: 47 mm, SH temp: 40°C, Chemistry: CH2F2 C4F8 O2 Ar, Mask: aSi; Etch rates: SiO2 450 nm/min, aSi 35 nm/min, JSR M108Y 130 nm/min; Selectivity 12:1[1]
- Process: CMI.SIN.OX (Si3N4 etch)
- Gap: 37 mm, SH temp: 40°C, Chemistry: CH2F2 O2 Ar, Mask: HSQ, PR; Etch rates: Si3N4 130 nm/min, Si 25 nm/min, HSQ 80 nm/min, PR 125 nm/min; Selectivity >1:1[1]
- Available process gases
- C4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000 sccm], N2 [100 sccm], Ar [1000 sccm][1]
- Example process: CMI.BARC
- Chemistry CF4; gap 47mm / SH temp 40°C; etch rate DUV42P 110 nm/min, M108Y/M35G 110 nm/min; selectivity SiO2: 170, Si: 85[1]
- Example process: CMI.OX.PR
- Chemistry C4F8 O2 Ar; gap 47mm / SH temp 40°C; SiO2 etch rates 440 nm/min @1100W, 230 nm/min @500W, 200 nm/min @400W, 160 nm/min @300W, 125 nm/min @200W, 85 nm/min; selectivity PR >3:1[1]
- Example process: CMI.OX.ASI
- Chemistry CH2F2 C4F8 O2 Ar; gap 47mm / SH temp 40°C; etch rates SiO2 450 nm/min, aSi 35 nm/min, JSR M108Y 130 nm/min; selectivity 12:1[1]
- Example process: CMI.SIN.OX
- Chemistry CH2F2 O2 Ar; gap 37mm / SH temp 40°C; etch rates Si3N4 130 nm/min, Si 25 nm/min, HSQ 80 nm/min, PR 125 nm/min; selectivity >1:1[1]
- Process gases (DRM chamber)
- C₄F₈ [30 sccm], CF₄ [100 sccm], CHF₃ [100 sccm], CH₂F₂ [100 sccm], O₂ [30 sccm & 1000 sccm], N₂ [100 sccm], Ar [1000 sccm][1]
- Etch process - BARC open (CMI.BARC)
- Chemistry: CF₄; Gap 47 mm, SH temp 40°C; Etch rate DUV42P: 110 nm/min, JSR M108Y, M35G: 110 nm/min; Selectivity: 1:1[1]
- Etch process - SiO₂ with PR mask (CMI.OX.PR @1100W)
- Chemistry: C₄F₈ O₂ Ar; Etch rate SiO₂: 440 nm/min @600W, 230 nm/min @500W, 200 nm/min @400W, 160 nm/min @300W, 125 nm/min @200W, 85 nm/min @?; Selectivity >3:1[1]
- Etch process - SiO₂ with aSi mask (CMI.OX.ASI)
- Chemistry: CH₂F₂ C₄F₈ O₂ Ar; Etch rate SiO₂: 450 nm/min, aSi: 35 nm/min, JSR M108Y: 130 nm/min; Selectivity 12:1[1]
- Etch process - Si₃N₄ with HSQ mask (CMI.SIN.OX)
- Chemistry: CH₂F₂ O₂ Ar; Etch rate Si₃N₄: 130 nm/min, Si: 25 nm/min, HSQ: 80 nm/min, PR: 125 nm/min; Selectivity >1:1[1]
Configuration & options11
- Chamber dedication
- Dedicated to and optimized for etching dielectrics (e.g. SiO2 and SixNy)[1]
What replaced it?
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Process gasesC4F8 (30 sccm), CF4 (100 sccm), CHF3 (100 sccm), CH2F2 (100 sccm), O2 (30 sccm and 1000 sccm), N2 (100 sccm), Ar (1000 sccm)[1]
- Process: CMI.BARC (BARC open)Gap: 47 mm, SH temp: 40°C, Chemistry: CF4, Mask: JSR M108Y, JSR M35G, DUV42P; Etch rates: DUV42P 110 nm/min, M108Y/M35G 110 nm/min, SiO2 170 nm/min, Si 85 nm/min; Selectivity 1:1[1]
- Process: CMI.OX.PR (SiO2 etch with PR mask)Gap: 47 mm, SH temp: 40°C, Chemistry: C4F8 O2 Ar, Mask: PR; Etch rates: SiO2 440 nm/min @600W, 230 @500W, 200 @400W, 160 @300W, 125 @200W, 85 @100W; Selectivity >3:1[1]
- Process: CMI.OX.ASI (SiO2 etch with aSi mask)Gap: 47 mm, SH temp: 40°C, Chemistry: CH2F2 C4F8 O2 Ar, Mask: aSi; Etch rates: SiO2 450 nm/min, aSi 35 nm/min, JSR M108Y 130 nm/min; Selectivity 12:1[1]
- Process: CMI.SIN.OX (Si3N4 etch)Gap: 37 mm, SH temp: 40°C, Chemistry: CH2F2 O2 Ar, Mask: HSQ, PR; Etch rates: Si3N4 130 nm/min, Si 25 nm/min, HSQ 80 nm/min, PR 125 nm/min; Selectivity >1:1[1]
- Available process gasesC4F8 [30 sccm], CF4 [100 sccm], CHF3 [100 sccm], CH2F2 [100 sccm], O2 [30 sccm & 1000 sccm], N2 [100 sccm], Ar [1000 sccm][1]
- Example process: CMI.BARCChemistry CF4; gap 47mm / SH temp 40°C; etch rate DUV42P 110 nm/min, M108Y/M35G 110 nm/min; selectivity SiO2: 170, Si: 85[1]
- Example process: CMI.OX.PRChemistry C4F8 O2 Ar; gap 47mm / SH temp 40°C; SiO2 etch rates 440 nm/min @1100W, 230 nm/min @500W, 200 nm/min @400W, 160 nm/min @300W, 125 nm/min @200W, 85 nm/min; selectivity PR >3:1[1]
- Example process: CMI.OX.ASIChemistry CH2F2 C4F8 O2 Ar; gap 47mm / SH temp 40°C; etch rates SiO2 450 nm/min, aSi 35 nm/min, JSR M108Y 130 nm/min; selectivity 12:1[1]
- Example process: CMI.SIN.OXChemistry CH2F2 O2 Ar; gap 37mm / SH temp 40°C; etch rates Si3N4 130 nm/min, Si 25 nm/min, HSQ 80 nm/min, PR 125 nm/min; selectivity >1:1[1]
- Process gases (DRM chamber)C₄F₈ [30 sccm], CF₄ [100 sccm], CHF₃ [100 sccm], CH₂F₂ [100 sccm], O₂ [30 sccm & 1000 sccm], N₂ [100 sccm], Ar [1000 sccm][1]
- Etch process - BARC open (CMI.BARC)Chemistry: CF₄; Gap 47 mm, SH temp 40°C; Etch rate DUV42P: 110 nm/min, JSR M108Y, M35G: 110 nm/min; Selectivity: 1:1[1]
- Etch process - SiO₂ with PR mask (CMI.OX.PR @1100W)Chemistry: C₄F₈ O₂ Ar; Etch rate SiO₂: 440 nm/min @600W, 230 nm/min @500W, 200 nm/min @400W, 160 nm/min @300W, 125 nm/min @200W, 85 nm/min @?; Selectivity >3:1[1]
- Etch process - SiO₂ with aSi mask (CMI.OX.ASI)Chemistry: CH₂F₂ C₄F₈ O₂ Ar; Etch rate SiO₂: 450 nm/min, aSi: 35 nm/min, JSR M108Y: 130 nm/min; Selectivity 12:1[1]
- Etch process - Si₃N₄ with HSQ mask (CMI.SIN.OX)Chemistry: CH₂F₂ O₂ Ar; Etch rate Si₃N₄: 130 nm/min, Si: 25 nm/min, HSQ: 80 nm/min, PR: 125 nm/min; Selectivity >1:1[1]
- Chamber clean processChemistry: O₂; Gap 27 mm, SH temp varies; Process name O2/CLN/XXC[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What type of etching system is the Tokyo Electron Unity Me?
It is an automatic plasma etching production tool. Its DRM chamber is a reactive ion etching chamber with magnetic-field assistance.[1]
What wafer size does the available configuration handle?
The available configuration is for 100 mm wafers.[1]
Which process chamber is available in the CMi configuration?
The available process module is P1 with the DRM chamber.[1]
Not publicly documented
The following facts about the Unity Me are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Unity Me are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Unity Me are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Unity Me are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the Unity Me is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Unity Me are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (2)Every fact above is drawn from these public sources
- [1]epfl.ch — epfl.chepfl.ch
- [2]Tactras | Tokyo Electron — tel.com (Feb 3, 2012)web.archive.org
Last updated Oct 8, 2026.
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