SPTS
The SPTS RIE-10 is a deep silicon etching system with dual plasma sources and dual gas inlets. The SPTS RIE-10 achieves an etch rate of 6–10 µm/min and aspect ratio up to 50:1. The SPTS RIE-10 uses fixed RF matching technology for reduced step-process time and controllable side wall roughness below 6 nm.[1][2]
Wafer size
6-inch wafers
Power
up to 3,000 W[1]
Performance
6–10 µm/min[1]
Gas delivery
>50:1[1]
Optics
Claritas End Point Detector[1]
The SPTS RIE-10 is used for silicon etch only.[1][2]
The SPTS RIE-10 is used for micro pillars, nano pillars, micro trenches, nano trenches, via etch, through wafer via etch, and wafer thinning.[1][2]
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RIE systems can etch a wide range of films used in device fabrication, including silicon, silicon dioxide, silicon nitride, various metals, and organic materials, depending on the chosen gas chemistry.
The directional ion bombardment in RIE produces anisotropic etch profiles, which preserves critical dimensions during pattern transfer and allows high-fidelity reproduction of small features.
The following facts about the RIE-10 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the RIE-10 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the RIE-10 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the RIE-10 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the RIE-10 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the RIE-10 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 5, 2026.
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