Comparison ledger
Applied Materials 0010 47763, SPTS RIE-10, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | RIE-10SPTS |
|---|---|---|
| OEM | Applied Materials | SPTS |
| Category | Etch | Etch |
| Wafer size | — | 6-inch wafers |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | SPTS RIE-10 |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Etch rate | — | 6–10 µm/min[4] |
| Aspect ratio | — | 50:1[4] |
| Selectivity to resist | — | >50:1[4] |
| Selectivity to silicon oxide | — | >100:1[4] |
| Uniformity | — | <5% across 6-inch wafers[4] |
| Primary RF power | — | up to 3,000 W[4] |
| Secondary RF power | — | up to 3,000 W[4] |
| Substrate power | — | up to 300 W[4] |
| Chuck temperature range | — | -15°C to +40°C[4] |
| Sample size handling | — | 6-inch or smaller samples[4] |
| End point detector | — | Claritas End Point Detector[4] |
| Wafer size | — | 6-inch wafers[5] |
| Tool type | — | deep silicon etching system[4] |
| Plasma sources | — | dual plasma sources[4] |
| Gas inlets | — | dual gas inlets[4] |
| Fixed RF matching | — | yes[4] |
| Dual plasma sources | — | yes[4] |
| Dual gas inlets | — | yes[4] |
| Side wall roughness (scallop depth) | — | <6 nm for nanoscale features; range 6–700 nm[4] |
| Wafer handling | — | 6-inch or smaller samples[4] |
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