Comparison ledger
SPTS RIE-10, Tegal 1512e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | RIE-10SPTS | 1512eTegal |
|---|---|---|
| OEM | SPTS | Tegal |
| Category | Etch | Etch |
| Wafer size | 6-inch wafers | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | SPTS RIE-10 | Tegal 1512e |
| Specifications | ||
| Etch rate | 6–10 µm/min[1] | — |
| Aspect ratio | 50:1[1] | — |
| Selectivity to resist | >50:1[1] | — |
| Selectivity to silicon oxide | >100:1[1] | — |
| Uniformity | <5% across 6-inch wafers[1] | — |
| Primary RF power | up to 3,000 W[1] | — |
| Secondary RF power | up to 3,000 W[1] | — |
| Substrate power | up to 300 W[1] | — |
| Chuck temperature range | -15°C to +40°C[1] | — |
| Sample size handling | 6-inch or smaller samples[1] | — |
| End point detector | Claritas End Point Detector[1] | — |
| Wafer size | 6-inch wafers[2] | — |
| Tool type | deep silicon etching system[1] | Industrial RIE plasma etcher system[3] |
| Plasma sources | dual plasma sources[1] | — |
| Gas inlets | dual gas inlets[1] | — |
| Fixed RF matching | yes[1] | — |
| Dual plasma sources | yes[1] | — |
| Dual gas inlets | yes[1] | — |
| Side wall roughness (scallop depth) | <6 nm for nanoscale features; range 6–700 nm[1] | — |
| Wafer handling | 6-inch or smaller samples[1] | — |
| Stated configuration | — | With modules assembly for CI-4222[3] |
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