Waferpedia

Raith

EBPG5200

Lithography6"Raith EBPG5200 family
Research Quality: 60% complete

The Raith EBPG5200 is an electron beam lithography tool. The Raith EBPG5200 operates at 100 kV. The Raith EBPG5200 has a 125 MHz pattern generator.[1][2]

RaithEBPG5200
No photo available yet

Wafer size

6"

Power

125 MHz[3]

Optics

EBPG Electron 100 kV[3]

What it is

General reference — not yet source-verified

The Raith EBPG5200 is an electron beam lithography system used for direct-write patterning on electron-sensitive resists.

The EBPG5200 belongs to the dedicated electron beam lithography class and is used for high-resolution pattern generation with beam energy and stage control suited to nanofabrication work.

How it works

The EBPG5200 uses a 100 kV electron beam lithography column with a 125 MHz pattern generator and automatic alignment functions.[1][2][6]

The EBPG5200 supports high-resolution exposure with a maximum current of 350 nA and a mainfield size of 1 mm.[1][2]

Where it fits in the process flow

The EBPG5200 is used for large-scale, high-speed patterning on positive and negative e-beam resists, and the patterned resist can then serve as the template for later process steps.[1][2]

Applications

The EBPG5200 is used for high-resolution patterning of standard semiconductor materials, low-vapor-pressure metals, and e-beam resists.[1][2]

  • High aspect ratio nanostructures
  • High speed direct write
  • Batch production
  • Compound semiconductor devices
  • Anticounterfeiting security elements

What do the numbers mean?

Power & electrical4

Pattern generator
125 MHz[3]2 sources
Accurate?
Acceleration voltages
20, 50 and 100 kV[3]
Accurate?
Acceleration voltage
100 kV[1]
Accurate?
Beam step frequency
500 Hz to 125 MHz[5]
Accurate?

Wafer handling1

Wafer size
6"[4]
Accurate?

Optics & imaging6

Technology
Direct write lithography / electron beam lithography[3]2 sources
Accurate?
Column technology
EBPG Electron 100 kV[3]2 sources
Accurate?
Overlay accuracy
≤ 5 nm[3]
Accurate?
Minimum feature size
Less than 8 nm[3]
Accurate?
Overlay accuracy
better than 10 nm[1]
Accurate?
Minimum linewidth
<8 nm[1]
Accurate?

Configuration & options8

Platform
Universal plinth platform shared with EBPG5150[3]
Accurate?
Stage
6" full travel[3]
Accurate?
Beam current
Up to 350 nA[3]
Accurate?
Large field size
Continuously variable up to 1 mm at all kVs[3]
Accurate?
Sample handling
Automatic 2 holder as standard; 10 holder optional[3]
Accurate?
Maximum current
350 nA[1]
Accurate?
Mainfield size
1 mm[1]
Accurate?
Beam current range
100 pA to 250 nA[5]
Accurate?

Vintage & configurations

Documented models & variants

DesignationGenerationVintageChangesSource
EBPG5200+——Described as an electron beam lithography tool capable of high resolution patterning at 100 kV with a 125 MHz pattern generator, 350 nA maximum current, and 1 mm mainfield size.wiki.nano.upenn.edu[1]
Interested in this tool?
Need help with this tool?Embed spec card

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Pattern generator125 MHz[3]
  • Acceleration voltages20, 50 and 100 kV[3]
  • Acceleration voltage100 kV[1]
  • Beam step frequency500 Hz to 125 MHz[5]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Worked with this tool? Help preserve its knowledge →

Frequently asked questions

Is an electron-beam lithography system maskless?General reference — not yet source-verified

Yes, for direct-write use. The pattern is transferred directly into electron-sensitive resist, so no physical photomask is needed. The same system can also write the masks used by optical lithography.

What types of substrate materials can be patterned?General reference — not yet source-verified

Common substrates include silicon wafers, compound semiconductor wafers, glass or quartz mask blanks, and small experimental coupons. The main practical requirements are that the substrate fit in the vacuum chamber and that its surface dissipate charge or be treated to avoid charging during exposure.

What are the limitations of electron-beam lithography?General reference — not yet source-verified

Because the beam writes features serially, throughput is low compared with optical exposure systems. The exposure is also sensitive to charging, drift, and other beam-placement errors, so careful tool control and calibration are needed to achieve good overlay and resolution.

How is a pattern prepared for exposure?General reference — not yet source-verified

The pattern is first designed in layout software and converted into the exposure data format used by the system. The pattern generator then interprets that data and directs the beam deflection and stage motion to write the layout into the resist layer.

What resists are commonly used?General reference — not yet source-verified

Both positive and negative electron-beam resists are used. Positive resists become more soluble where exposed, leaving the unexposed pattern; negative resists become less soluble where exposed, leaving the exposed pattern after development.

Not publicly documented

The following facts about the EBPG5200 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the EBPG5200 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • The control-system platform and OS era of the EBPG5200 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the EBPG5200 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the EBPG5200 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the EBPG5200 are on record.

    Answerable by: an OEM parts catalog or a service engineer

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (6)Every fact above is drawn from these public sources
  1. [1]wiki.nano.upenn.edu — wiki.nano.upenn.eduwiki.nano.upenn.edu
  2. [2]Singh Center for Nanotechnology — nano.upenn.edunano.upenn.edu
  3. [3]web.archive.org — web.archive.orgweb.archive.org
  4. [4]waferpedia.com — waferpedia.comwaferpedia.com
  5. [5]nanolabnl.nlnanolabnl.nl
  6. [6]Raith EBPG5200 plus &#8211; Ebeam tool &#8210; Center of MicroNanoTechnology CMi &#8208; EPFL — epfl.chepfl.ch
Was this page accurate?

Last updated Oct 9, 2026.

Compare with similar tools

View all →