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Oxford Instruments

Plasmalab 80 Plus RIE

Etch8"Oxford Instruments Plasmalab 80 family
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The Oxford Instruments Plasmalab 80 Plus is a reactive ion etcher (RIE) for semiconductor etching. The Plasmalab 80 Plus RIE features a 300 W 13.56 MHz RF generator. The Plasmalab 80 Plus handles wafers up to 8 inches in diameter.[1][2][3]

Plasmalab 80 Plus RIE — Inventory photo
Fig. 01Plasmalab 80 Plus RIEInventory photo[1]

Wafer size

8"

Power

50/60 Hz[1]

Vacuum

30 - 100 Mtorr[1]

Performance

5 - 10 % range[3]

Gas delivery

100 sccm[1]

What it is

The Oxford Instruments Plasmalab 80 Plus RIE is a reactive ion etcher used for semiconductor processing. The equipment is a plasma etch system with a 300 watt 13.56 MHz RF generator, a corrosion-resistant turbo-molecular pump with a rotary pump, and a chamber gas set that includes Ar, CF4, O2, CHF3, SF6, and He.[1]

How it works

General reference — not yet source-verified

A reactive ion etcher removes material by combining plasma chemistry with ion bombardment at low pressure. The tool generates a plasma in a process chamber, uses radio-frequency power to sustain the discharge, and directs reactive species toward the wafer surface while the vacuum system maintains the operating environment.

Why won't it start?

Documented failure modes, common issues, and field considerations.

  • Missing one 15 V power supply (needed to work)

What do the numbers mean?

Power & electrical8

50/60 Hz[1]
Accurate?
Voltage
415 VAC, 3 Phase[1]
Accurate?
Full Load Amps
25.6 A[1]
Accurate?
RF Generator
300 Watt 13.56 MHZ[1]
Accurate?
Phase
3 Phase[2]
Accurate?
RF generator
300 Watt 13.56MHz[2]
Accurate?
Missing one 15 V Power Supply (needed to work)[4]
Accurate?
Frequency
50/60 Hz[1]
Accurate?

Vacuum & pumping5

Typical Process Pressure
30 - 100 Mtorr[1]
Accurate?
Pumping System
Corrosion Resistant Turbo Molecular Pump with Rotary Pump[1]
Accurate?
Typical process pressure
30 – 100 mtorr[2]
Accurate?
Pumping system
Corrosion-resistant turbo-molecular pump with rotary pump[2]
Accurate?
Pumps Down[4]
Accurate?

Wafer handling5

Wafer size
Small piece of wafer until max full 8 inches wafer[2]
Accurate?
PECVD Tested for 2" - 4" wafers[3]
Accurate?
Wafer Size
Small piece of wafer up to full 8 inches[2]
Accurate?
Wafer Sizes Supported
2, 3, 4, 5, 6, 8 inch[2]
Accurate?
PECVD Capability
9 inch plate, tested for 2-4 inch wafers[3]
Accurate?

Gas & chemistry5

Max Flow Rate Per Gas
100 sccm[1]
Accurate?
Available Gases in Chamber
Ar, CF4, O2, CHF3, SF6, & He[1]
Accurate?
Available gas in the chamber
Ar, CF4, O2, CHF3, SF6 & He.[2]
Accurate?
Chamber Gases
Ar, CF4, O2, CHF3, SF6, He[1]
Accurate?
Available Gases
Ar, CF4, O2, CHF3, SF6, He[1]
Accurate?

Performance1

Uniformity
5 - 10 % range[3]
Accurate?

Control & software1

HDD & Software Included[1]
Accurate?

Configuration & options6

Table
Cool Down Only (No Heating)[1]
Accurate?
Table
Only cooled down, no heating.[2]
Accurate?
Dual Chamber[3]
Accurate?
With 9" plate[3]
Accurate?
Table Type
Cool down only (no heating)[1]
Accurate?
Dual Chamber Configuration
Available on some units[3]
Accurate?
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What replaced it?

Alternatives

Tools documented as functional equivalents — same process step and wafer size, from a different manufacturer. Each equivalence cites its source.

What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Configuration50/60 Hz[1]
  • Voltage415 VAC, 3 Phase[1]
  • Full Load Amps25.6 A[1]
  • Max Flow Rate Per Gas100 sccm[1]
  • RF Generator300 Watt 13.56 MHZ[1]
  • Typical Process Pressure30 - 100 Mtorr[1]
  • Pumping SystemCorrosion Resistant Turbo Molecular Pump with Rotary Pump[1]
  • Available Gases in ChamberAr, CF4, O2, CHF3, SF6, & He[1]
  • Phase3 Phase[2]
  • Available gas in the chamberAr, CF4, O2, CHF3, SF6 & He.[2]
  • RF generator300 Watt 13.56MHz[2]
  • Typical process pressure30 – 100 mtorr[2]
  • Pumping systemCorrosion-resistant turbo-molecular pump with rotary pump[2]
  • ConfigurationPumps Down[4]
  • ConfigurationMissing one 15 V Power Supply (needed to work)[4]
  • Chamber GasesAr, CF4, O2, CHF3, SF6, He[1]
  • Frequency50/60 Hz[1]
  • Available GasesAr, CF4, O2, CHF3, SF6, He[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

No research found yet — worked with this tool? Share what you know.

Worked with this tool? Help preserve its knowledge →

Frequently asked questions

What wafer sizes does the Plasmalab 80 Plus support?

The system supports wafer sizes from 2 inches up to 8 inches.[2][3]

What is the typical process pressure range for the Plasmalab 80 Plus?

Typical process pressure is 30 to 100 mTorr.[1][2]

What is the maximum flow rate per gas on the Plasmalab 80 Plus?

The maximum flow rate per gas is 100 sccm.[1][2]

Not publicly documented

The following facts about the Plasmalab 80 Plus RIE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Plasmalab 80 Plus RIE are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Plasmalab 80 Plus RIE are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Plasmalab 80 Plus RIE are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • The process node or technology generation of the Plasmalab 80 Plus RIE is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the Plasmalab 80 Plus RIE are on record.

    Answerable by: an OEM parts catalog or a service engineer

Sources & citations

Sources (8)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]Inventory photo
  3. [3]inventory listing
  4. [4]inventory listing
  5. [5]allwin21.comallwin21.com
  6. [6]University-of-Utah-94-721002-System-Manual — nanofab.utah.edunanofab.utah.edu
  7. [7]Oxford Plasmalab 80 Plus | UCLA Nanolab — nanolab.ucla.edunanolab.ucla.edu
  8. [8]PECVD System Manual - Maryland University 94-219896 .pdf — nanocenter.umd.edunanocenter.umd.edu
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Last updated Oct 8, 2026.

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