Comparison ledger
Lam Research Rainbow 4520, Oxford Instruments Plasmalab 80 Plus RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Rainbow 4520Lam Research | Plasmalab 80 Plus RIEOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 8" | 8" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research Rainbow 4520 | Oxford Instruments Plasmalab 80 |
| Cited variants |
| — |
| Specifications | ||
| OEM | Lam Research[1] | — |
| Model | Lam Rainbow 4520[1] | — |
| Condition | Refurbished and Upgraded[1] | — |
| Chuck type | Clamp; customized[1] | — |
| Wafer size | Up to 8 inch capability; customized[1] | Small piece of wafer until max full 8 inches wafer[3] |
| Controller | Allwin21 PC with touch screen monitor[1] | — |
| Operation modes | Maintenance, Manual, Semi Automatic and Full Automatic[1] | — |
| Wafer handling | Fully automated, in-line, single-wafer plasma/RIE etching system[1] | — |
| Gases | 1-6 or 1-8 lines with MFC; maximum 9 lines[1] | — |
| Endpoint | Dual endpoint 405nm/520nm; EOP optional[1] | — |
| Type | Plasma/RIE etching system[1] | — |
| Automation | Fully automated, in-line, single-wafer[1] | — |
| Wafer Sizes | 6-inch or 8-inch[1] | — |
| Electrode | Top or/and bottom powered electrode plate[1] | — |
| Electrode Spacing | Programmable[1] | — |
| Wafer Alignment | Automatic noncontact wafer alignment and placement[1] | — |
| RF Match | Unique RF match networks located at upper and lower electrodes for programmable switching between plasma and RIE modes[1] | — |
| Main Use | Oxide Etch (Lam Rainbow 45XX Series)[1] | — |
| Control | Computer-controlled, manual or automatic control[1] | — |
| Chamber Type | Main chamber, moving gap standard process kit[1] | — |
| Chuck Type | Clamp chuck; ESC chuck optional[1] | — |
| Number of Gases | 1-6 or 1-8 lines MFC, maximum 9 lines[1] | — |
| Typical Gases | Ar, CF4, CHF3, He, SF6, N2, NF3 (process dependent)[1] | — |
| Endpoint Detection | Dual endpoint 405nm/520nm EOP is optional[1] | — |
| Chiller | TCU LAM2080 Chiller module or equivalent is optional[1] | — |
| Base Pressure | ≤ 5 mT[1] | — |
| Chamber Leak Rate | ≤ 5 mT/min[1] | — |
| ELL & XLL Leak Rate | ≤ 10 mT/min[1] | — |
| Gap Set Point | 1 cm, tolerance ≤ 0.02 cm[1] | — |
| Chiller Precision | ± 1 ℃[1] | — |
| MFC/RF/DC Precision | ≤5% of set points[1] | — |
| Particle (Bare-Si, RF-Off) | < 50 @0.3um[1] | — |
| Power | 208V, 50/60Hz, 3 phase, 5 wires, WYE, 30A(Max), 23(Norm) for Etcher[1] | — |
| Physical Dimensions (Etcher) | 44"W x 54"D x 66"H, 1700 lbs[1] | — |
| Physical Dimensions (RF Cart) | 22"W x 32"D x 44"H, 250 lbs[1] | — |
| Physical Dimensions (TCU) | 23"W x 37"D x 55"H, 420 lbs[1] | — |
| Exhaust | Etcher Cabinet: Draw CFM 300, H2O 0.5, House, 4 inch Duct; Etcher Gas Panel: Draw CFM 75, H2O 0.5, Scrubbed, possible hazard, 2 inch Duct[1] | — |
| Cooling Water | R.F. Cart: 2±0.2 GPM, 85±5 PSI, 14~35°C, 3/8" ID fittings, <200 u; TCU: 6±0.5 GPM, 11~26°C, 1/2" ID fittings, <200 u[1] | — |
| Nitrogen | 40±10 PSI and 90±10 PSI, CDA can also be used for R.F. Cart[1] | — |
| Thermal Output | Etcher: 3.4K carried by water, 3.4k by exhaust, 7k dispersed; RF Cart: 7K carried by water, 7k dispersed; TCU: 4K carried by water, 1k dispersed[1] | — |
| Process Gases | 1/4" VCR fittings, <0.05u filter[1] | — |
| Configuration | — | 50/60 Hz[2] |
| Voltage | — | 415 VAC, 3 Phase[2] |
| Full Load Amps | — | 25.6 A[2] |
| Max Flow Rate Per Gas | — | 100 sccm[2] |
| RF Generator | — | 300 Watt 13.56 MHZ[2] |
| Table | — | Cool Down Only (No Heating)[2] |
| Typical Process Pressure | — | 30 - 100 Mtorr[2] |
| Pumping System | — | Corrosion Resistant Turbo Molecular Pump with Rotary Pump[2] |
| Available Gases in Chamber | — | Ar, CF4, O2, CHF3, SF6, & He[2] |
| Phase | — | 3 Phase[3] |
| Available gas in the chamber | — | Ar, CF4, O2, CHF3, SF6 & He.[3] |
| RF generator | — | 300 Watt 13.56MHz[3] |
| Typical process pressure | — | 30 – 100 mtorr[3] |
| Pumping system | — | Corrosion-resistant turbo-molecular pump with rotary pump[3] |
| Uniformity | — | 5 - 10 % range[4] |
| Chamber Gases | — | Ar, CF4, O2, CHF3, SF6, He[2] |
| Table Type | — | Cool down only (no heating)[2] |
| Wafer Size | — | Small piece of wafer up to full 8 inches[3] |
| Frequency | — | 50/60 Hz[2] |
| Available Gases | — | Ar, CF4, O2, CHF3, SF6, He[2] |
| Wafer Sizes Supported | — | 2, 3, 4, 5, 6, 8 inch[3] |
| Dual Chamber Configuration | — | Available on some units[4] |
| PECVD Capability | — | 9 inch plate, tested for 2-4 inch wafers[4] |
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