Comparison ledger
Applied Materials 0041-39086 ESC Part, Oxford Instruments Plasmalab 80 Plus RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-39086 ESC PartApplied Materials | Plasmalab 80 Plus RIEOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | 8" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Oxford Instruments Plasmalab 80 |
| Specifications | ||
| Configuration | — | 50/60 Hz[1] |
| Voltage | — | 415 VAC, 3 Phase[1] |
| Full Load Amps | — | 25.6 A[1] |
| Max Flow Rate Per Gas | — | 100 sccm[1] |
| RF Generator | — | 300 Watt 13.56 MHZ[1] |
| Table | — | Cool Down Only (No Heating)[1] |
| Typical Process Pressure | — | 30 - 100 Mtorr[1] |
| Pumping System | — | Corrosion Resistant Turbo Molecular Pump with Rotary Pump[1] |
| Available Gases in Chamber | — | Ar, CF4, O2, CHF3, SF6, & He[1] |
| Phase | — | 3 Phase[2] |
| Available gas in the chamber | — | Ar, CF4, O2, CHF3, SF6 & He.[2] |
| Wafer size | — | Small piece of wafer until max full 8 inches wafer[2] |
| RF generator | — | 300 Watt 13.56MHz[2] |
| Typical process pressure | — | 30 – 100 mtorr[2] |
| Pumping system | — | Corrosion-resistant turbo-molecular pump with rotary pump[2] |
| Uniformity | — | 5 - 10 % range[3] |
| Chamber Gases | — | Ar, CF4, O2, CHF3, SF6, He[1] |
| Table Type | — | Cool down only (no heating)[1] |
| Wafer Size | — | Small piece of wafer up to full 8 inches[2] |
| Frequency | — | 50/60 Hz[1] |
| Available Gases | — | Ar, CF4, O2, CHF3, SF6, He[1] |
| Wafer Sizes Supported | — | 2, 3, 4, 5, 6, 8 inch[2] |
| Dual Chamber Configuration | — | Available on some units[3] |
| PECVD Capability | — | 9 inch plate, tested for 2-4 inch wafers[3] |
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