Oxford Instruments

PECVD4

Deposition Oxford Instruments PECVD4 family

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Oxford InstrumentsPECVD4

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What it is

The PECVD4 is one of several PECVD tools in the Oxford Plasmalab System 100 family installed at university research cleanrooms. The system is used for depositing dielectric thin films on semiconductor substrates.^[2]^[1]

How it works

The Oxford Plasmalab System 100 PECVD uses RF power at 81 MHz for the deposition of silicon oxide and silicon nitride films. The system employs a high-frequency (HF) generator to sustain the plasma.^[3]^[2]^[4]

Applications

The PECVD4 is applied to deposit silicon oxide and silicon nitride thin films using plasma-enhanced chemical vapor deposition. Process specifications for both SiOx and SixNy depositions have been documented for this tool.^[2]^[3]^[5]

PECVD
SiOx deposition
SixNy deposition

What do the numbers mean?

Power & electrical2

Process reference: PECVD SiOx Deposition with 81MHz Power^[1]
Process reference: PECVD SixNy Deposition with 81MHz Power^[1]

Configuration & options3

OEM: Oxford Instruments^[1]2 sources
Model: PECVD4^[1]2 sources
Full equipment name: Oxford Plasmalab System 100 PECVD System^[1]2 sources

Vintage & configurations

Documented models & variants

Designation	Generation	Vintage	Changes	Source
Oxford PECVD4 - SiOx	—	—	SiOx process specification	nanolab.berkeley.edu^[1]
Oxford PECVD4 - SixNy	—	—	SixNy process specification	nanolab.berkeley.edu^[1]

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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

Process referencePECVD SiOx Deposition with 81MHz Power^[1]
Process referencePECVD SixNy Deposition with 81MHz Power^[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What is the full equipment name of the PECVD4?

The PECVD4 is an Oxford Plasmalab System 100 PECVD system.^[1]^[3]^[5]

What materials can be deposited with the PECVD4?

The PECVD4 is used to deposit silicon oxide (SiOx) and silicon nitride (SixNy) films.^[2]^[3]^[5]

What RF power frequency is used for the deposition processes?

The PECVD4 uses 81 MHz RF power for SiOx and SixNy deposition processes.^[3]^[5]

Not publicly documented

The following facts about the PECVD4 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the PECVD4 are on record.
Answerable by: OEM historical records or a trade-press announcement
The control-system platform and OS era of the PECVD4 are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the PECVD4 are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the PECVD4 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the PECVD4 are on record.
Answerable by: an OEM parts catalog or a service engineer

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Sources & citations

Sources (5)Every fact above is drawn from these public sources

[1]nanolab.berkeley.edu — nanolab.berkeley.edunanolab.berkeley.edu
[2]Physical Vapor Deposition — nanolab.berkeley.edunanolab.berkeley.edu
[3]PECVD4 — Oxford Instruments | Specs, Sourcing & Service | Waferpedia — waferpedia.comwaferpedia.com
[4]Deposition of SiN with PECVD4/NEW TESTS QC - LabAdviser — labadviser.nanolab.dtu.dklabadviser.nanolab.dtu.dk
[5]Oxford Instruments PECVD4 family | Waferpedia — waferpedia.comwaferpedia.com