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Lam Research

Concept One 150 PECVD-TEOS

DepositionLam Research Concept One 150 family
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The Lam / Novellus Concept One 150 PECVD-TEOS is a plasma-enhanced chemical vapor deposition system. The system processes 6-inch wafers and uses tetraethyl orthosilicate (TEOS) as a precursor for silicon dioxide deposition.[1]

Concept One 150 PECVD-TEOS — Inventory photo
Fig. 01Concept One 150 PECVD-TEOSInventory photo[1]

What it is

The Concept One 150 is a plasma-enhanced chemical vapor deposition (PECVD) system manufactured by Lam Research under the Novellus brand.[1]

How it works

General reference — not yet source-verified

PECVD systems of this class deposit thin films by introducing gaseous precursors into a vacuum chamber, where a plasma enhances the chemical reaction at reduced temperatures.

For TEOS-based deposition, the organosilicon precursor reacts with an oxidizer in the plasma to form a silicon dioxide layer on the wafer surface.

Where it fits in the process flow

General reference — not yet source-verified

Deposition systems of this type are typically used in the fabrication of integrated circuits to form insulating layers, such as interlayer dielectrics, at a stage after the underlying devices have been patterned.

The deposited film may be subsequently etched or polished to create the desired topography for interconnect structures.

Applications

General reference — not yet source-verified

A PECVD-TEOS system is used to deposit silicon dioxide films for applications including intermetal dielectric layers, passivation, and gap fill in semiconductor manufacturing.

What do the numbers mean?

Power & electrical2

Phase
3 Phase[1]
Accurate?
Voltage
208 Vac[1]
Accurate?

Wafer handling1

Wafer Size
6 inch[1]
Accurate?

Gas & chemistry1

Process
PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[1]
Accurate?

Configuration & options4

Si 02 / TEOS[1]
Accurate?
100 Current[1]
Accurate?
Current
100 Current[1]
Accurate?
Deposition Material
Si 02 / TEOS (Silicon Dioxide / Tetraethyl Orthosilicate)[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Phase3 Phase[1]
  • Voltage208 Vac[1]
  • ProcessPECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[1]

Where are the manuals?

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Not publicly documented

Field notes

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Not publicly documented

The following facts about the Concept One 150 PECVD-TEOS are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Concept One 150 PECVD-TEOS are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the Concept One 150 PECVD-TEOS are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the Concept One 150 PECVD-TEOS are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the Concept One 150 PECVD-TEOS are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the Concept One 150 PECVD-TEOS is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (1)Every fact above is drawn from these public sources
  1. [1]Inventory photo
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Last updated Oct 4, 2026.

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