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KLA

8250 CD-SEM

Metrology & InspectionKLA 8250 CD-SEM family
Research Quality: 40% complete

Provisional entry — research in progress

This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The KLA 8250 CD-SEM is a critical dimension scanning electron microscope (CD-SEM) for e-beam metrology, used to measure and image semiconductor wafer features. The KLA 8250 CD-SEM achieves a resolution below 4 nm and handles feature sizes below 30 nm. The KLA 8250 CD-SEM supports wafer sizes from 3 to 8 inches and can accommodate substrates such as Si, GaAs, SiC, InP, and sapphire.[1]

KLA8250 CD-SEM
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Power

0.4 kV – 1.5 kV[2]

Optics

< 30 nm[2]

What it is

The KLA 8250 CD-SEM supports wafer sizes from 3 to 8 inches. The instrument uses a Schottky thermal field emitter as its electron source. The system has a resolution of less than 4 nanometers and a feature size capability of less than 30 nanometers. Accelerating voltage ranges from 0.4 to 1.5 kV. Magnification covers a range of 2.34 kX to 400 kX. The stage provides a position accuracy of less than 1 micrometer with laser guidance. Throughput is up to 55 wafers per hour.[1][2]

How it works

General reference — not yet source-verified

A CD-SEM operates by focusing a narrow electron beam onto the wafer surface and scanning it in a raster pattern. Secondary electrons emitted from the surface are collected to form an image from which critical dimensions are measured. The instrument must maintain a high vacuum environment to allow unimpeded electron travel.

Where it fits in the process flow

General reference — not yet source-verified

CD-SEMs are used in semiconductor fabrication after photolithography and etch steps to measure the critical dimensions of features. Measurements provide feedback for process control and ensure pattern fidelity. The tool typically operates in a cleanroom environment and may be part of an automated metrology loop.

What do the numbers mean?

Power & electrical3

Accelerating Voltage
0.4 kV – 1.5 kV[2]
Accurate?
Power Requirements
120V–220VAC, 1PH, 50/60Hz[2]
Accurate?
Power
120V-220VAC, 1PH, 50/60HZ[1]
Accurate?

Wafer handling7

Throughput
up to 55 wafers/hr (8 inch)[1]
Accurate?
Wafer Sizes
3 inch, 4 inch, 6 inch, 8 inch[1]
Accurate?
Wafer Types
Si, SiC, GaN, GaAs, InP, Sapphire, Quartz[1]
Accurate?
Wafer Loading Stations
3[1]
Accurate?
Wafer Sizes
8 inch[3]
Accurate?
Throughput
up to 55 wafers/hr[2]
Accurate?
Wafer Sizes
3", 4", 6", 8"[1]
Accurate?

Optics & imaging4

Feature Size
< 30 nm[2]
Accurate?
Resolution
< 4 nm[2]
Accurate?
Magnification
2.34 kX – 400 kX[2]
Accurate?
Stage Accuracy
< 1 µm (laser guided)[2]
Accurate?

Control & software2

Operating System
Windows NT/XP[1]
Accurate?
Operating System
Win NT/XP[1]
Accurate?

Dimensions & facilities1

Type
Critical Dimension Scanning Electron Microscope (CD-SEM)[3]
Accurate?

Configuration & options4

Electron Source
Schottky, Thermal Field Emitter[2]
Accurate?
SMIF Compatibility
Yes[1]
Accurate?
Model
8250[3]
Accurate?
Model Year
2005[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Accelerating Voltage0.4 kV – 1.5 kV[2]
  • Power Requirements120V–220VAC, 1PH, 50/60Hz[2]
  • Power120V-220VAC, 1PH, 50/60HZ[1]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

How does a CD-SEM differ from a standard SEM?General reference — not yet source-verified

While both use electron microscopy, a CD-SEM is optimized for automated, precise dimensional measurement with specialized algorithms and drift compensation, and is integrated into fab automation.

What is the typical resolution of a CD-SEM?General reference — not yet source-verified

CD-SEMs achieve high resolution suitable for advanced semiconductor nodes, enabling measurement of very small features. The exact resolution depends on the specific model and operating conditions.

Are CD-SEMs non-destructive?General reference — not yet source-verified

Yes, they are typically non-destructive, using low beam currents and energies to minimize sample damage, which allows for in-line monitoring of production wafers.

Not publicly documented

The following facts about the 8250 CD-SEM are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 8250 CD-SEM are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 8250 CD-SEM are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 8250 CD-SEM are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 8250 CD-SEM are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 8250 CD-SEM is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (3)Every fact above is drawn from these public sources
  1. [1]gcemarket.com — gcemarket.comgcemarket.com
  2. [2]wotol.com — wotol.comwotol.com
  3. [3]Equipment inventory listing
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Last updated Oct 7, 2026.

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