Waferpedia

EV Group

501 Wafer

501 Wafer — Inventory photo
Fig. 01501 WaferInventory photo[1]
  • Plate 01EVG 501 Wafer Bonder (ID# 4726)

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Wafer size

Manual wafer load substrate bonder

Power

0-2000 V, 0-50 mA[3]

Vacuum

High-vacuum capable bond chamber[2]

Performance

± 1,5 %[2]

What it is

The EVG 501 is a manual-load wafer bonding system from EV Group. The system can handle substrate sizes from single chips to 200 mm. The EVG 501 supports multiple bonding processes including anodic, direct, fusion, glass frit, solder, eutectic, transient liquid phase, and thermal compression bonding.[3][2]

How it works

The EVG 501 has an open chamber design for fast conversion and maintenance. The maximum contact force is up to 20 kN. Top and bottom side heaters can reach up to 450 °C. The standard vacuum capability is 1×10⁻¹ mbar, with an optional high-vacuum version to 1×10⁻⁵ mbar. The system provides an anodic bonding power supply of 0 to 2000 V and 0 to 50 mA. Temperature uniformity is specified as ±1.5 %.[3][2]

Applications

General reference — not yet source-verified

Wafer bonding is used in microelectromechanical systems for device sealing, in three-dimensional integrated circuits for stacking, in wafer-level packaging, and in the production of silicon-on-insulator wafers. Each application requires a specific bonding method, such as anodic, direct, or glass frit bonding.

What do the numbers mean?

Power & electrical1

Power supply for anodic bonding
0-2000 V, 0-50 mA[3]
Accurate?

Vacuum & pumping5

High-vacuum capable bond chamber[2]
Accurate?
Turbo pump and controller[2]
Accurate?
Roughing pump[2]
Accurate?
Vacuum (standard)
1x10-1 mbar[3]
Accurate?
Vacuum (optional)
1x10-5 mbar[3]
Accurate?

Wafer handling4

Wafer size
Manual wafer load substrate bonder[2]
Accurate?
Wafer size
up to 6”/150mm[2]
Accurate?
Wafer sizes
2, 3, 4, 5, 6 inch (up to 150 mm)[2]
Accurate?
Substrate size
single chips to 200 mm[3]
Accurate?

Performance1

Temperature uniformity
± 1,5 %[2]
Accurate?

Control & software3

Windows based control software and operation interface[2]
Accurate?
System computer, monitor, and keyboard[2]
Accurate?
Control software
Windows-based[2]
Accurate?

Dimensions & facilities1

Footprint
0.8 m2[3]
Accurate?

Configuration & options12

Capable of fusion compression bonding[2]
Accurate?
Capable of thermal compression bonding[2]
Accurate?
Capable of anodic bonding[2]
Accurate?
Max Bond Force
7 kN[2]
Accurate?
Top side heater
550°C max. in 1°C steps[2]
Accurate?
Bottom side heater
550°C max. in 1°C steps[2]
Accurate?
Load/unload tool[2]
Accurate?
Max bond force
7 kN (source 1) or up to 20 kN (source 2)[2]
Accurate?
Top side heater max temperature
550°C in 1°C steps (source 1)[2]
Accurate?
Bottom side heater max temperature
550°C in 1°C steps (source 1)[2]
Accurate?
Maximum temperature (source 2)
up to 450°C[3]
Accurate?
Conversion time
less than 5 minutes[3]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • ConfigurationHigh-vacuum capable bond chamber[2]
  • ConfigurationTurbo pump and controller[2]
  • ConfigurationRoughing pump[2]
  • Vacuum (standard)1x10-1 mbar[3]
  • Vacuum (optional)1x10-5 mbar[3]
  • Power supply for anodic bonding0-2000 V, 0-50 mA[3]

Where are the manuals?

Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.

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Not publicly documented

Field notes

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Frequently asked questions

What bonding modes does the EVG 501 Wafer Bonder support?

It supports fusion compression bonding, thermal compression bonding, and anodic bonding.[2]

What are the heater limits?

The top-side heater and bottom-side heater are each stated to reach 550°C in 1°C steps.[2]

Not publicly documented

The following facts about the 501 Wafer are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 501 Wafer are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the 501 Wafer are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the 501 Wafer are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the 501 Wafer are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the 501 Wafer is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

No research found yet — worked with this tool? Share what you know.

Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]Inventory photo
  2. [2]inventory listing
  3. [3]aggiefab.tamu.edu — aggiefab.tamu.eduaggiefab.tamu.edu
  4. [4]EVG|Wafer Bonding Systeme — evgroup.com (Mar 12, 2017)web.archive.org
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Last updated Oct 1, 2026.

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