Comparison ledger
Applied Materials 0041-26723 Bonded Assembly, EV Group 501 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-26723 Bonded AssemblyApplied Materials | 501 WaferEV Group |
|---|---|---|
| OEM | Applied Materials | EV Group |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | — | Manual wafer load substrate bonder |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0041-26723 Bonded Assembly | EV Group 501 Wafer |
| Specifications | ||
| Wafer size | — | Manual wafer load substrate bonder[1] |
| Configuration | — | Capable of fusion compression bonding[1] |
| Max Bond Force | — | 7 kN[1] |
| Top side heater | — | 550°C max. in 1°C steps[1] |
| Bottom side heater | — | 550°C max. in 1°C steps[1] |
| Temperature uniformity | — | ± 1,5 %[1] |
| Wafer sizes | — | 2, 3, 4, 5, 6 inch (up to 150 mm)[1] |
| Substrate size | — | single chips to 200 mm[2] |
| Max bond force | — | 7 kN (source 1) or up to 20 kN (source 2)[1] |
| Top side heater max temperature | — | 550°C in 1°C steps (source 1)[1] |
| Bottom side heater max temperature | — | 550°C in 1°C steps (source 1)[1] |
| Maximum temperature (source 2) | — | up to 450°C[2] |
| Vacuum (standard) | — | 1x10-1 mbar[2] |
| Vacuum (optional) | — | 1x10-5 mbar[2] |
| Power supply for anodic bonding | — | 0-2000 V, 0-50 mA[2] |
| Footprint | — | 0.8 m2[2] |
| Conversion time | — | less than 5 minutes[2] |
| Control software | — | Windows-based[1] |
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