Axcelis
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The Axcelis Purion H 200 is a single-wafer high current ion implanter. The Purion H 200 combines a high-current beamline with post-corrector acceleration and deceleration to extend the usable energy range from sub 10 keV to over 400 keV. The Purion H 200 delivers high beam currents for commonly used dopants (B, P, As) with a maximum single charge energy range up to 230 keV.[1][2]
The Purion H 200 combines a high-current beamline with post-corrector acceleration and deceleration to extend the usable energy range.[1]
The Purion H 200 uses an indirectly heated cathode source, an analyzer magnet, magnetic quadrupole lenses, a magnetic scanner, and an S-bend corrector magnet in the beamline.[1]
The Purion H 200 uses an Angular Energy Filter and wafer handling system to deliver a monoenergetic beam to the substrate.[1]
The Purion H 200 is positioned for high-volume manufacturing of silicon and silicon carbide devices.[1]
Documented failure modes, common issues, and field considerations.
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The following facts about the Purion H 200 High Current are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Purion H 200 High Current are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Purion H 200 High Current are on record.
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The control-system platform and OS era of the Purion H 200 High Current are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the Purion H 200 High Current is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Purion H 200 High Current are on record.
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Last updated Oct 7, 2026.
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