Waferpedia

Axcelis

GSD 200 E 2

Ion ImplantationAxcelis GSD 200 E 2 family
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This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.

The Axcelis GSD 200 E 2 is a high current ion implanter. The Axcelis GSD 200 E 2 operates at 180 KeV. The Axcelis GSD 200 E 2 processes 8-inch wafers.[1]

GSD 200 E 2 — Inventory photo
Fig. 01GSD 200 E 2Inventory photo[2]

What it is

The Axcelis GSD 200 E 2 is an ion implanter.[2][3][4]

The GSD 200E2 is a high current ion implanter for semiconductor processing.[1]

How it works

General reference — not yet source-verified

An ion implanter accelerates charged dopant ions and directs them into a wafer surface to alter electrical properties in selected regions.

A high current ion implanter emphasizes delivery of a large ion beam current for doping steps that need substantial implanted dose.

Where it fits in the process flow

General reference — not yet source-verified

Ion implantation is a front-end wafer doping step in semiconductor manufacturing.

Ion implantation typically follows pattern definition and resist or mask preparation and precedes thermal steps that activate or repair the implanted region.

Applications

General reference — not yet source-verified

Ion implanters are used to form doped regions in silicon and other semiconductor substrates.

High current implantation is used for semiconductor doping steps that require substantial implanted dose.

What do the numbers mean?

Power & electrical5

Voltage
208 V[3]
Accurate?
Frequency
50 Hz[3]
Accurate?
Phase
3 Phase[3]
Accurate?
Power Requirements
208 V, 125 A, 50 Hz, 3 Phase[3]
Accurate?
Amperage
125 A[3]
Accurate?

Wafer handling2

Wafer Size
8 inch (200 mm)[1]
Accurate?
Wafer Size
8"[1]
Accurate?

Configuration & options7

Type
High Current ion implanter[1]
Accurate?
Energy
180 KeV[1]
Accurate?
Vintage (listed unit 158479)
2000[2]
Accurate?
Vintage (listed unit 158478)
2004[3]
Accurate?
Maximum Energy
180 keV[1]
Accurate?
Current
125 A[3]
Accurate?
Energy Rating
180KeV[1]
Accurate?
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Voltage208 V[3]
  • Frequency50 Hz[3]
  • Phase3 Phase[3]
  • Power Requirements208 V, 125 A, 50 Hz, 3 Phase[3]
  • Amperage125 A[3]

Where are the manuals?

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Not publicly documented

Field notes

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Frequently asked questions

What type of equipment is the Axcelis GSD 200 E 2?

The Axcelis GSD 200 E 2 is an ion implanter.[2][3][4]

Not publicly documented

The following facts about the GSD 200 E 2 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the GSD 200 E 2 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented variants, configuration options, or revision breakpoints of the GSD 200 E 2 are on record.

    Answerable by: an OEM product catalog or an engineer who ordered or specified the tool

  • The control-system platform and OS era of the GSD 200 E 2 are not on record.

    Answerable by: an engineer who operated it or OEM installation records

  • No publicly documented failure modes or field errata for the GSD 200 E 2 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the GSD 200 E 2 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

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Sources & citations

Sources (4)Every fact above is drawn from these public sources
  1. [1]asseta.com — asseta.comasseta.com
  2. [2]Inventory photo
  3. [3]Inventory photo
  4. [4]Equipment inventory listing
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Last updated Oct 7, 2026.

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