G 5 Plus MOCVD

The Aixtron G 5 Plus is a metal-organic chemical vapor deposition (MOCVD) system for compound semiconductors. The system is configured for six-inch wafers and can process a batch of five eight-inch wafers. The G 5 Plus includes a Penta Injector gas delivery module, an EpiTT version 1 process control system, and Aixact software version 7.1.2.8. The reactor uses a planetary module and operates as a batch reactor.^[1][2]

The G 5 Plus uses a planetary reactor that rotates wafers on a susceptor to achieve uniform film thickness, composition, and dopant concentration. The system is a batch reactor with a warm ceiling design that minimizes heat flux through the wafers. The platform provides chlorine-based in-situ cleaning and a cassette-to-cassette wafer handler. Process gases include hydrogen, nitrogen, ammonia, and chlorine; metalorganic sources include trimethylgallium, trimethylaluminium, and Cp2Mg. The tool uses a CT500 single-filter exhaust, an Ebara ESA80 process pump, two scroll pumps for a glovebox and an antechamber, and Horiba mass flow controllers.^[1][2]

The G 5 Plus is applied to gallium nitride deposition on silicon, sapphire, and silicon carbide substrates. The platform supports advanced GaN applications on 150 mm and 200 mm substrates. The system can accommodate a batch of five eight-inch wafers.^[1][2]