Comparison ledger
Aixtron G 5 Plus MOCVD, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | G 5 Plus MOCVDAixtron | 0010-13622 RF Match forApplied Materials |
|---|---|---|
| OEM | Aixtron | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Aixtron G 5 Plus MOCVD | Applied Materials 0010-13622 RF Match for |
| Specifications | ||
| Possible to run (QTY | 5) 8" wafers[1] | — |
| Configuration | Penta Injector[1] | High Efficiency HE RF Match-Bias[3] |
| Two scroll pumps | for the glove box (1) and the Antechamber (1)[1] | — |
| Wafer size (standard) | 6 inch[1] | — |
| Wafer capacity (configurable) | 8×150 mm or 5×200 mm[2] | — |
| Injector | Penta Injector[1] | — |
| Software version | Aixact 7.1.2.8[1] | — |
| Process pump | Ebara ESA80[1] | — |
| Exhaust | Single filter exhaust CT500[1] | — |
| Mass flow controllers | Horiba MFC's[1] | — |
| Process module voltage | 208 VAC[1] | — |
| RF generator voltage | 480 VAC[1] | — |
| Wafer transfer modules | None[1] | — |
| Substrate types | Si, Sapphire, SiC[2] | — |
| Reactor type | Planetary reactor module[2] | — |
| In-situ cleaning | Cl2 in-situ cleaning[2] | — |
| Wafer handler | Cassette-to-cassette[2] | — |
| Vintage | 2013[1] | — |
| Model | — | 0010-13622[3] |
| Product Type | — | RF Match for PVD (Physical Vapor Deposition)[3] |
| Feature | — | High Efficiency HE RF Match-Bias[3] |
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