Aixtron
The Aixtron G 5 HT IC 2 MOCVD Reactor is a MOCVD reactor. The Aixtron G 5 HT IC 2 MOCVD Reactor is configured for InGaN MOCVD epitaxy. The Aixtron G 5 HT IC 2 MOCVD Reactor uses 6 x 6-inch wafers.[1][2][3]

The G 5 HT IC 2 includes an RF coil heating system with a Trumpf Huttinger RF generator, individual gas foil rotation control for each puck, a standard exhaust system, a process pump, and in-situ pyrometry.[1][2]
The G 5 HT IC 2 includes a nitrogen glovebox, gas purification components, concentration monitors, chiller baths for metal organic sources, and a reactor chiller to support precursor handling and thermal control.[1][2]
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The following facts about the G 5 HT IC 2 MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the G 5 HT IC 2 MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the G 5 HT IC 2 MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the G 5 HT IC 2 MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 11, 2026.
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