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G 5 HT IC 2 MOCVD Reactorversus0020 12458 Part

Aixtron G 5 HT IC 2 MOCVD Reactor, Applied Materials 0020 12458 Part, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 12458 PartApplied Materials
OEMAixtronApplied Materials
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAixtron G 5 HT IC 2 MOCVD ReactorApplied Materials 0020 12458 Part
Specifications
Software VersionAIXACT 6.0.0.27[1]—
PLC6.0.3830[1]—
ConfigurationSLC[1]Insulator,Side Match,Hdp-Cvd Ultima Plus[2]
ProcessInGaN MOCVD Epitaxy[1]—
Wafer6 x 6"[1]—
Metal Organic SourcesTMln x 3, 100 ppm SiH4 in Ar x 20 x 2[1]—
Concentration Monitors (2)Epison4 x 3 for TMln, Epison4 x 2 for TEGa[1]—
PurifiersEntegris Getters for H2 & N2, Nanochem for NH3[1]—
Heating SystemRF Coil with Trumpf Huttinger RF Generator TruHeat 7120[1]—
Glove BoxMBraun Nitrogen Glovebox with Controller[1]—
Process PumpEbara ESA 80 W[1]—
DOR & Glove BoxPumpsAnesta Iwata Scroll Pump (2)[1]—
AbatementUnisem UN 2000 A-WHG (shared across 2 reactors)[1]—
Reactor ChillerTek-Temp Recirculating Closed Loop Chiller[1]—
Gas Foil Rotation (GFR)Individual GFR Control for Each Puck[1]—
OEMAixtron[1]—
ModelG 5 HT IC 2 MOCVD Reactor[1]0020 12458[2]
Chiller Baths6 available for MO sources[1]—
Ceiling Temperature Controlepresent[1]—
In-Situ Pyrometryavailable[1]—
Vintage2010[1]—
Concentration Monitors(2) Epison4 x 3 for TMln, Epison4 x 2 for TEGa[1]—
Asset number—146526[2]
Make—Applied Materials[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing