Aixtron
2600 G 3 HT IC MOCVD Reactor
The Aixtron 2600 G 3 HT IC MOCVD Reactor is a deposition reactor. The Aixtron 2600 G 3 HT IC MOCVD Reactor is configured for InGaN MOCVD epitaxy. The Aixtron 2600 G 3 HT IC MOCVD Reactor supports 6 x 6-inch wafers.[1][2]
What it is
The Aixtron 2600 G 3 HT IC MOCVD Reactor is a metal-organic chemical vapor deposition reactor used in semiconductor deposition.[1][2]
The tool is part of the Aixtron AIX 2600 family.[2]
How it works
The Aixtron 2600 G 3 HT IC MOCVD Reactor uses an RF coil heating system with a Trumpf Huttinger RF generator, gas foil rotation with individual control for each puck, and in-situ pyrometry as an available option.[1][2]
The tool includes a custom built automatic ceiling loader, a glove box, a custom built exhaust system, process pumps, reactor chillers, purifiers, filters, and abatement.[1][2]
Where it fits in the process flow
Applications
What do the numbers mean?
Power & electrical1
Vacuum & pumping4
- Custom Built Exhaust System[1]
Wafer handling2
- Ceiling Temperature Control, Custom Built Automatic Ceiling Loader[1]
Gas & chemistry2
Control & software4
- Software Version; AIXACT 7.4.1.9[1]
Configuration & options17
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Heating SystemRF Coil with Trumpf Huttinger RF Generator BIG 120/50[1]
- ConfigurationCustom Built Exhaust System[1]
- Process PumpEbara ESA 70 W or ESA 80 W[1]
- DOR & Glove Box PumpsAdixen ACP-15(G) x 2[1]
- Vacuum/exhaustCustom Built Exhaust System[2]
- Gas Foil Rotation (GFR)Individual GFR Control for Each Puck[1]
- Spare Channels23 Spare MFC Channels & 10 Spare Valve output Channels[1]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Not publicly documented
The following facts about the 2600 G 3 HT IC MOCVD Reactor are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 2600 G 3 HT IC MOCVD Reactor are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 2600 G 3 HT IC MOCVD Reactor are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 2600 G 3 HT IC MOCVD Reactor are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 2600 G 3 HT IC MOCVD Reactor are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 2600 G 3 HT IC MOCVD Reactor is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (2)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]waferpedia.com — waferpedia.comwaferpedia.com
Last updated Oct 11, 2026.
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