Waferpedia

Comparison ledger

400-seriesversusWS-650-15

Laurell 400-series, Laurell WS-650-15, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
400-seriesLaurell
WS-650-15Laurell
OEMLaurellLaurell
CategorySpin coaterSpin coater
Wafer size150mm300mm
Process node——
Introduced1995—
Production run1995–—
LifecycleDiscontinued—
Lifecycle milestones2011 End of life—
Control system——
Generation—650-series
FamilyLaurell 400-seriesLaurell WS-650-15
Cited variants
  • WS-650-15 B650-series[2]
  • WS-650-15B650-series[3]
  • WS-650-15 B650-series[4]
Specifications
Process controller400-series process controller capable of storing and automatically running process recipes consisting of run time and acceleration rate, with manual operation also supported[1]650-series process controller[2]
Spin speed10,000 RPM (based on a 100 mm SEMI Std. wafer)[5]—
Maximum wafer sizeUp to 150 mm wafers[5]—
Substrate size4" x 4" (102 mm x 102 mm) substrates[5]—
Standard chuck1.75" (45 mm) diameter vacuum chuck[5]—
Standard adapter coverageOne fragment adapter standard covering 10 mm through 150 mm SEMI wafers[1]—
Housing materialSolid co-polymer blend exclusive to Laurell Technologies[1]—
Power95 to 240 VAC, 47/63 Hz, ~300 Watts[1]95 to 240VAC, 47/63HZ, ~300 Watts[2]
Vacuum suggestion25–28 inches Hg vacuum with 4.5 SCFM flow at 0 inches Hg suggested[1]—
Maximum substrate sizeØ150 mm wafers and 4" × 4" (102 mm × 102 mm) substrates[5]—
Maximum speed10,000 RPM (based on a Ø100 mm SEMI Std. wafer)[5]—
Vacuum chuck diameter1.75" (45 mm) diameter vacuum chuck[1]—
Fragment adapter coverage10 mm through 150 mm SEMI wafers[1]—
Power requirement95 to 240VAC, 47/63HZ, ~300 Watts[1]—
Maximum rotational speed—12,000 RPM (based on a ø 100mm silicon wafer)[2]
Wafer capacity—up to ø 300mm wafers[2]
Substrate capacity—9" × 9" (229mm × 229mm) substrates[2]
Model—WS-650-15[2]
Configuration—Station mounted[2]
Speed basis—Based on a 100mm silicon wafer[2]
Processes supported—Coating, Etching, Developing, Rinsing-Drying and Cleaning[2]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]web.archive.orgweb.archive.org
  3. [3]web.archive.orgweb.archive.org
  4. [4]web.archive.orgweb.archive.org
  5. [5]web.archive.orgweb.archive.org