STS
Multiplex
The STS Multiplex PECVD is a plasma-enhanced chemical vapor deposition system for depositing thin films such as oxide, nitride, and silicon. The STS Multiplex PECVD operates in single or dual-wafer batch mode with no cassette operation. The STS Multiplex PECVD processes wafers up to 6 inches and supports silicon nitride (Si3N4) deposition using gases including oxygen, carbon tetrafluoride (CF4), silane, nitrous oxide, and ammonia.[1][2]
What it is
The STS Multiplex is a plasma-enhanced chemical vapor deposition system.[1]
How it works
General reference — not yet source-verifiedPlasma-enhanced chemical vapor deposition uses a plasma to activate precursor gases and form a solid film on a wafer surface.
The STS Multiplex uses process gases and a wafer stage to build deposited layers from reactive gas-phase chemistry.
Where it fits in the process flow
General reference — not yet source-verifiedThe STS Multiplex belongs in the thin-film deposition portion of a semiconductor process flow.
The STS Multiplex is used before later pattern transfer or etch steps when a deposited dielectric or related film is needed on the wafer.
Applications
The STS Multiplex deposits silicon dioxide and silicon nitride.[1]
The STS Multiplex uses oxygen, carbon tetrafluoride, silane, nitrous oxide, and ammonia as process gases.[1]
The STS Multiplex PECVD deposition system is used for thin films such as oxide, nitride, silicon carbide, amorphous silicon, and phosphorus-doped amorphous silicon.[2]
What do the numbers mean?
Wafer handling2
Gas & chemistry4
Configuration & options13
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What films does the STS Multiplex PECVD deposit?
The STS Multiplex PECVD deposits oxide, nitride, silicon carbide, amorphous silicon, and phosphorus-doped amorphous silicon films.[2]
Can the STS Multiplex process pieces as well as wafers?
The STS Multiplex can work on pieces and on wafers up to six inches in size.[2]
Not publicly documented
The following facts about the Multiplex are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Multiplex are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Multiplex are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Multiplex are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the Multiplex are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the Multiplex is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (5)Every fact above is drawn from these public sources
- [1]Inventory photo
- [2]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
- [3]Etching ‒ Center of MicroNanoTechnology CMi ‐ EPFL — epfl.chepfl.ch
- [4]STS Multiplex ICP RIE - Claire & John Bertucci Nanotechnology Laboratory - College of Engineering - Carnegie Mellon Univ — nanofab.ece.cmu.edunanofab.ece.cmu.edu
- [5]Equipment List — nanofab.utah.edunanofab.utah.edu
Last updated Sep 29, 2026.
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