Plasma-Therm
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The Plasma-Therm 7300 PE (7000) is a plasma-enhanced chemical vapor deposition (PECVD) system. The system supports 8-inch wafers.[1]
A PECVD reactor typically consists of a vacuum chamber with a gas distribution system, a substrate holder that can be heated or cooled, and a radio-frequency (RF) power source to generate a plasma. The precursor gases flow into the chamber and are dissociated in the plasma, creating reactive species that adsorb on the wafer and react to form the desired film. By-products are pumped away. The process parameters — RF power, pressure, gas flow rates, and substrate temperature — control film properties such as composition, thickness uniformity, and stress.
System vintage
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The following facts about the 7300 PE (7000) are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
Fewer than 3 independently cited specifications for the 7300 PE (7000) are on record; the remainder await public documentation.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented variants, configuration options, or revision breakpoints of the 7300 PE (7000) are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 7300 PE (7000) are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 7300 PE (7000) are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 7300 PE (7000) is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Sep 30, 2026.
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