Waferpedia

Karl Suss

SB8

Backend6"Karl Suss SB8 family
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The Karl Suss SB8 Wafer Bonder is a wafer bonding system used in backend semiconductor processing.[1]

SB8 — nanolab.ucla.edu
Fig. 01SB8nanolab.ucla.edu[1]

Wafer size

6"

Power

up to 2000 V[2]

Vacuum

5e-5 to 3e3 Torr with nitrogen[2]

Performance

+/- 5 degrees[2]

Control era

Windows-based

What it is

The Karl Suss SB8 is a semi-automated universal wafer bonding system. The system handles wafers up to 200 mm in diameter. The system has a footprint of 1.2 m by 0.6 m.[3]

How it works

Temperature control ranges from 30 °C to 500 °C with a ramping speed of up to 30 K per minute. Bond force is selectable from 300 N to 20 kN. The system implements Sequential Spacer Removal (SSR), which removes spacers sequentially during bonding to minimize wafer shift and maintain post-bond alignment.[3]

Where it fits in the process flow

General reference — not yet source-verified

The SB8 is typically used in the backend of semiconductor fabrication after wafer processing is complete. Upstream steps include cleaning and alignment of the wafers to be bonded. Downstream steps include thinning, dicing, and final packaging of the bonded stack.

Applications

The SB8 supports a range of bonding technologies including fusion bonding, eutectic bonding, diffusion bonding, anodic bonding, anodic triple stack bonding, and adhesive bonding. The system is designed for applications such as packaging and structuring processes in MEMS, LED, advanced packaging, 2.5D integration, and 3D integration.[3]

  • silicon fusion bonding
  • anodic bonding
  • eutectic bonding
  • thermal compression bonding
  • aligned bonding

What do the numbers mean?

Power & electrical1

Anodic bonding voltage
up to 2000 V[2]
Accurate?

Vacuum & pumping2

Bonding pressure environment
5e-5 to 3e3 Torr with nitrogen[2]
Accurate?
Chamber pressure control
Flexibly programmable (exact range not stated)[3]
Accurate?

Wafer handling4

Force capability
up to 20 kN for a 150 mm wafer size[2]
Accurate?
Sample size
pieces to 6" wafers[2]
Accurate?
Loading
manual loading of wafers[2]
Accurate?
Wafer size
Up to 200 mm (wafers and various substrate shapes/sizes)[3]
Accurate?

Performance2

Temperature accuracy
+/- 5 degrees[2]
Accurate?
Temperature uniformity
+/- 3% uniformity[2]
Accurate?

Control & software2

Control
Windows-based computer control[2]
Accurate?
Sequential Spacer Removal (SSR)
Yes (individual spacer actuation controlled via recipe)[3]
Accurate?

Dimensions & facilities1

Footprint
1.2 m x 0.6 m[3]
Accurate?

Configuration & options8

Bonding types
silicon fusion, anodic, and eutectic bonding[2]
Accurate?
Temperature range
50°C to 550°C[2]
Accurate?
Heated samples
upper and lower heating of samples[2]
Accurate?
Aligned bonding
mates with the Karl-Suss MA-6 aligner for aligned bonding[2]
Accurate?
Temperature range
30°C to 500°C (measured directly on tooling plate surface)[3]
Accurate?
Temperature ramping speed
Up to 30 K/min[3]
Accurate?
Bond force range
300 N to 20 kN[3]
Accurate?
Bonding technologies supported
Fusion bonding, eutectic bonding, diffusion bonding, anodic bonding, anodic triple stack bonding, adhesive bonding[3]
Accurate?

Vintage & configurations

Control-system eraWindows-based[2]

Documented models & variants

DesignationGenerationVintageChangesSource
SB8 Gen2Gen2—Semi-automated universal wafer bonding system capable of handling wafers up to 200 mm; supports fusion, eutectic, diffusion, anodic, anodic triple stack, and adhesive bonding; temperature range 30–500 °C, ramp rate up to 30 K/min; bond force 300 N to 20 kN; footprint 1.2 m x 0.6 m; features Sequential Spacer Removal (SSR) for precise post-bond alignment.suss.com[3]
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What does it need to run?

Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.

  • Bonding pressure environment5e-5 to 3e3 Torr with nitrogen[2]
  • Anodic bonding voltageup to 2000 V[2]
  • Chamber pressure controlFlexibly programmable (exact range not stated)[3]

Where are the manuals?

Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.

Not publicly documented

Field notes

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Frequently asked questions

What temperature range can the SB8 achieve?

The temperature range is 30 °C to 500 °C measured on the tooling plate surface, with a ramping rate up to 30 K per minute.[3]

What bond force range is available on the SB8?

Bond force ranges from 300 N to 20 kN.[3]

Which bonding technologies does the SB8 support?

The SB8 supports fusion, eutectic, diffusion, anodic, anodic triple stack, and adhesive bonding.[3]

Not publicly documented

The following facts about the SB8 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.

  • No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the SB8 are on record.

    Answerable by: OEM historical records or a trade-press announcement

  • No publicly documented failure modes or field errata for the SB8 are on record.

    Answerable by: a field service engineer, process engineer, or maintenance technician

  • The process node or technology generation of the SB8 is not on record.

    Answerable by: an OEM datasheet or a fab qualification report

  • No publicly documented compatible parts, consumables, or accessories for the SB8 are on record.

    Answerable by: an OEM parts catalog or a service engineer

  • No publicly hosted manuals, SOPs, or datasheets for the SB8 are on record.

    Answerable by: university cleanroom staff or an OEM application specialist

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Sources & citations

Sources (5)Every fact above is drawn from these public sources
  1. [1]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
  2. [2]nanolab.ucla.edu — nanolab.ucla.edunanolab.ucla.edu
  3. [3]suss.com — suss.comsuss.com
  4. [4]Equipment | UCLA Nanolab — nanolab.ucla.edunanolab.ucla.edu
  5. [5]SB8 Gen2 | SUSS — suss.comsuss.com
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Last updated Sep 30, 2026.