Comparison ledger
Sumitomo NV GSD HE, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD HESumitomo | 160 XPVarian |
|---|---|---|
| OEM | Sumitomo | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Sumitomo NV GSD HE | Varian 160 XP |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Disk Type:[2] | — |
| Wafer Titlt Function | α + β ≤ ±11° adjustable[2] | — |
| Manufacturer | Sumitomo[2] | — |
| Model | NV GSD HE[2] | — |
| Category | Ion Implantation[3] | — |
| Wafer size | 6 inch[2] | — |
| Wafer handling | 17 wafers[3] | — |
| Wafer tilt function | α + β ≤ ±11° adjustable[2] | — |
| Disk type | Full Disk; AL Solid Disk; 150 mm[2] | — |
| Available gas types | Ar (external supply); BF3 (SDS3 4X); Xe (3.4 L)[2] | — |
| Maximum injection energy | 3,000 keV (varies depending on ion species)[2] | — |
| Configuration (160 XP Ion variant) | — | 150mm High Current IMP[1] |
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