Comparison ledger
Applied Materials 0041-39086 ESC Part, Lam Research 4520 i Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0041-39086 ESC PartApplied Materials | 4520 i OxideLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Lam Research Rainbow 4520 |
| Specifications | ||
| Configuration | — | Bulkhead system mount w/tunnel covers[1] |
| Software Version | — | Classic 7,31-42[2] |
| Phase | — | Main Power 208V, 3 Phase, 5Wire, 175A, 60/[1] |
| Make | — | Lam[2] |
| Model | — | 4520 i[2] |
| Equipment type | — | Oxide Etcher[3] |
| Wafer size | — | 6 inch[2] |
| Clamp type | — | ESC[2] |
| System mount | — | Bulkhead system mount w/tunnel covers[2] |
| RF power | — | Rack AE PDW2200 RFG1250 13,56MHz[2] |
| Main power | — | 208V, 3 Phase, 5Wire, 175A, 60/[2] |
| Endpoint detector | — | Single lower chamber endpoint detector (405/520nm) Non-heated endpoint window[2] |
| Vacuum / pumping | — | Low pressure chamber manifold; AC--2 chamber pressure control[2] |
| Gas 1 | — | AR 375sccm[2] |
| Gas 2 | — | CF4 100 sccm[2] |
| Gas 3 | — | CHF3 50 sccm[2] |
| Gas 4 | — | He 200 sccm[2] |
| Gas 5 | — | O2 20 sccm[2] |
| Gas 6 | — | N2 200 sccm[2] |
| Gas 8 | — | He 1000sccm[2] |
| UPC | — | He (50 sccm)[2] |
| Wafer handling | — | Hine 38A open cassette Send/Receive indexers[2] |
| Gas 7 | — | NF3 500 sccm[1] |
| Applications | — | Contact etch; Planarization; Via etch; Trench mask etch; Pad etch[4] |
| System | — | Single wafer, two active processing chambers, vacuum load-locked low pressure oxide system[4] |
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