Lam Research
4520 i Oxide
The Lam 4520 i Oxide is a 6-inch oxide etcher. The Lam 4520 i Oxide is configured with an ESC clamp type and a bulkhead system mount. The Lam 4520 i Oxide has Classic 7,31-42 software.[1][2][3]
Power
RF power Rack AE PDW2200 RFG1250 13,56MHz[3]
Vacuum
Low pressure chamber manifold[3]
Gas delivery
AR 375sccm[1]
What it is
The Lam Research 4520 i Oxide is an oxide etcher used in semiconductor manufacturing.[2]
How it works
Where it fits in the process flow
Applications
What do the numbers mean?
Power & electrical5
Vacuum & pumping4
Wafer handling3
- Hine 38A open cassette Send/Receive indexers[3]
Gas & chemistry9
Optics & imaging3
Control & software1
Configuration & options17
- Bulkhead system mount w/tunnel covers[3]
- Oxide etcher, 6”[3]
- Clamp type, ESC[3]
- AE Isotropic Module[3]
- AC Rack AC Power Distribution[3]
- Back Helium Colling[3]
- Belt driven load station[3]
- Standard load station shuttle spatula[3]
- Upper chamber gap drive encoder[3]
- Aluminum upper chamber electrode[3]
- HPS valve for chamber isolation[3]
- Lower chamber RGA port[3]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- ConfigurationRF power Rack AE PDW2200 RFG1250 13,56MHz[3]
- PhaseMain Power 208V, 3 Phase, 5Wire, 175A, 60/[3]
- ConfigurationDip PCB for RF power tuning[3]
- ConfigurationLow pressure chamber manifold[3]
- ConfigurationAC--2 chamber pressure control[3]
- RF powerRack AE PDW2200 RFG1250 13,56MHz[1]
- Main power208V, 3 Phase, 5Wire, 175A, 60/[1]
- Vacuum / pumpingLow pressure chamber manifold; AC--2 chamber pressure control[1]
- Gas 1AR 375sccm[1]
- Gas 2CF4 100 sccm[1]
- Gas 3CHF3 50 sccm[1]
- Gas 4He 200 sccm[1]
- Gas 5O2 20 sccm[1]
- Gas 6N2 200 sccm[1]
- Gas 8He 1000sccm[1]
- UPCHe (50 sccm)[1]
- Gas 7NF3 500 sccm[3]
- SystemSingle wafer, two active processing chambers, vacuum load-locked low pressure oxide system[4]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What types of oxide materials can this class of machine etch?General reference — not yet source-verified
Such systems are designed to etch various silicon dioxide-based films, including thermal oxide, CVD oxides, and doped glasses such as PSG and BPSG.
How does endpoint detection work in these tools?General reference — not yet source-verified
Optical emission spectroscopy is commonly used to monitor changes in the plasma chemistry when the underlying layer is exposed, allowing precise endpoint detection.
What are the key performance metrics for this class of etcher?General reference — not yet source-verified
Key metrics include etch uniformity across the wafer, selectivity to underlying layers, and profile control (anisotropy), all of which are critical for reliable device patterning.
What is the typical process chemistry used?General reference — not yet source-verified
Fluorocarbon gases such as CF₄, CHF₃, or C₄F₈ are often used, sometimes with additives like oxygen or argon to tailor etch rates and selectivity.
Not publicly documented
The following facts about the 4520 i Oxide are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 4520 i Oxide are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 4520 i Oxide are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 4520 i Oxide are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 4520 i Oxide are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 4520 i Oxide is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (4)Every fact above is drawn from these public sources
- [1]waferpedia.com — waferpedia.comwaferpedia.com
- [2]waferpedia.com — waferpedia.comwaferpedia.com
- [3]Inventory photo
- [4]cdn2.hubspot.net — cdn2.hubspot.netcdn2.hubspot.net
Last updated Oct 9, 2026.
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