Comparison ledger
CEE 100, GCA 200, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | 200GCA |
|---|---|---|
| OEM | CEE | GCA |
| Category | Lithography | Lithography |
| Wafer size | 6" | up to 6-inch diameter wafers; substrate size approximately 10 x 10 mm up to 100 mm, with 150 mm possible |
| Process node | — | i-line |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | CEE 100 | GCA 200 |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | Lithography[3] |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | — |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| Manufacturer | — | GCA[3] |
| Description | — | GCA 200 I-Line Wafer Stepper[3] |
| Exposure wavelength | — | i-line (365 nm)[3] |
| Exposure mode | — | Step and repeat[3] |
| Wafer loading | — | Manual wafer loading[3] |
| Supported piece parts | — | Down to smaller than 10 mm x 10 mm[3] |
| Supported wafer diameter | — | Up to 6 inches[3] |
| Maximum square die size | — | 14.8 mm x 14.8 mm[3] |
| Lens | — | Olympus 2145[3] |
| Numerical aperture | — | 0.45[3] |
| Mask reduction | — | 5x[3] |
| Ultimate resolution | — | Better than 0.5 um in the center of the lens field[3] |
| Resolution across field | — | 0.7 um isolated lines across the entire field[3] |
| Alignment tolerance | — | Better than 0.25 um global alignment; better than 0.15 um local alignment[3] |
| I-line intensity | — | About 420 mW/cm² at the wafer with a 1000 W Hg arc lamp[3] |
| Control | — | Computer controlled; recipes can be programmed and saved on hard disk[3] |
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