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Comparison ledger

NV GSD HE Ionversus160 XP

Axcelis NV GSD HE Ion, Varian 160 XP, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
160 XPVarian
OEMAxcelisVarian
CategoryIon ImplantationIon Implantation
Wafer size6"—
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV GSD HE IonVarian 160 XP
Cited variants—
Specifications
ConfigurationRefurbished in 2023[2]—
Wafer size6" Wafer Handling Station Installed[2]—
Frequency60 Hz[3]—
Phase3 phase[3]—
Full Load Current99 A[2]—
Power82 kVA[2]—
Input Breaker150 A[2]—
Amp Rating Largest Load99 A[3]—
Max Interrupt Capacity14 kA[2]—
Beam Exhaust1 MeV[3]—
Beam Current1 mA[2]—
Main ComputerSolaris, SW 5.3[2]—
Main MonitorLCD[2]—
Second ComputerSolaris[2]—
Second MonitorLCD[2]—
OEMAxcelis[2]—
ModelNV GSD HE[2]—
CategoryIon Implantation[3]—
Wafer Sizes6, 8 inch[2]—
Refurbished2023[2]—
Beam HandlingNotch[2]—
Dummy Cassette25[2]—
Load Buffer17[2]—
Vacuum Cassette17[2]—
Beam Profile OscilloscopeIncluded[2]—
Wafer Handling Station Installed6 inch[2]—
Disk TypeACLS 11003980[2]—
Gyro & Angle - Type & DegreeAlpha & Beta, +/-11 degrees[2]—
Rotary Driver1200 rpm[2]—
HV Power SupplyHunting Hivolt[2]—
HV StackHunting Hivolt[2]—
AMUBuckley[2]—
Configuration (160 XP Ion variant)—150mm High Current IMP[1]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing
  3. [3]waferpedia.comwaferpedia.com