Comparison ledger
Applied Materials 0020 23839 Part, Ulvac SIV 200 ITO, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0020 23839 PartApplied Materials | SIV 200 ITOUlvac |
|---|---|---|
| OEM | Applied Materials | Ulvac |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0020 23839 Part | Ulvac SIV 200 ITO |
| Cited variants | — |
|
| Specifications | ||
| Configuration | Plate, Sensor Clamp, Hdpcvd Ultima +[2] | — |
| Process module | — | 3-station process module (P1, P2, P3)[1] |
| Power supply | — | 5 kW pulsed DC power supply[1] |
| P3 station role | — | P3 is dedicated to ITO or other transparent conductive films (TCF); has O₂ MFC and 13.56 MHz power supply/match to maintain ITO stoichiometry[1] |
| Wafer handling | — | Handles (3) 6-inch wafers on a 200 × 200 mm carrier; front-end stocker holds 6 carriers[1] |
| Vacuum system | — | Load lock has roughing pump and water pump; process chamber has roughing pump T-ed to turbo/water pump and cryo pump auto-load; uses Ulvac 10-inch cryo and 10-inch water pump/turbo[1] |
| Deposition rate | — | Up to 50 nm/min or more, depending on the target and process[1] |
| Sputtering mode | — | Single-source reactive magnetron sputtering; a single-source RF magnetron deposits oxide films like ITO and A-Si[1] |
| Depositable materials | — | Handles both conductive and insulative films, including high-transparency films for display applications[1] |
| Optional high-temperature oxidation chamber | — | An integrated high-temperature atmospheric-pressure oxidation chamber is available to deposit refractory oxide films with high oxidation rates and film purity[1] |
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