Comparison ledger
Applied Materials 0010 47763, Ulvac NE-550, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | NE-550Ulvac |
|---|---|---|
| OEM | Applied Materials | Ulvac |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Ulvac NE-550 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | — |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| Equipment name | — | Ulvac NE-550 Chlorine Etcher[5] |
| System type | — | Multipurpose high-density, low-pressure plasma etching system[5] |
| Performance note | — | Good uniformity and repeatability[5] |
| Materials etched | — | III-V, metals, ceramics, and optical materials[5] |
| Wafer Diameter(s) | — | 100 mm, 150 mm, 200 mm[6] |
| Batch sizes | — | 100 mm: 1, 150 mm: 1, 200 mm: 1[6] |
| Wafer thickness | — | 200 - 1000 µm[6] |
| Wafer materials | — | Pyrex (Corning 7740), quartz (fused silica), silicon on insulator, quartz (single crystal), silicon carbide, fused silica, silicon germanium, silicon[6] |
| Plasma Source | — | ISM (Inductively Super Magnetron)[1] |
| Electrode | — | STAR Electrode[1] |
| Wafer diameters | — | 100 mm, 150 mm, 200 mm[6] |
| Wafer thickness range | — | 200 – 1000 µm[6] |
| Batch sizes (wafers per run) | — | 100 mm: 1, 150 mm: 1, 200 mm: 1[6] |
| Electrode type | — | STAR Electrode[1] |
| End-point detection | — | Optical Emission EPD (optional), Laser Interference EPD (optional)[1] |
| Wafer temperature control | — | ESC with He cooling, Mechanical Chuck[1] |
| Maintenance | — | Simple maintenance mechanism[1] |
| Batch size | — | 1 wafer (100 mm, 150 mm, 200 mm)[6] |
| Wafer geometry | — | 1-flat, 2-flat, notched, no-flat[6] |
| Process type | — | High-density plasma etching[1] |
| Plasma source | — | ISM (Inductively Super Magnetron) Plasma Source[1] |
| Intended use | — | R&D test facilities such as universities and government agencies[1] |
| Location (UCLA) | — | CNSI Site[5] |
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