Comparison ledger
ABM -407B-2-S-CE-S293 Robot, Onto Innovation Nanospec 3000, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Nanospec 3000Onto Innovation | |
|---|---|---|
| OEM | ABM | Onto Innovation |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ABM -407B-2-S-CE-S293 Robot | Onto Innovation Nanospec 3000 |
| Specifications | ||
| Model | ABM-407B-2-S-CE-S293[1] | — |
| Description | ROBOT[1] | — |
| Refurbished RTP RTA | AG Associates 4100, 4108, 8108, 8800, 8800i,210, 310, 410, 610, 610I, MPT RTP-600S, 800S, RTP-3000[1] | — |
| KLA-Tencor Spare Parts and Service | RS-35C,RS-55,RS-75,RS-100,UV-1050,UV-1080,UV-1250,UV-1280,ASET F5 / F5X,AIT Systems,HRP-220 Stylus Profiler[1] | — |
| Refurbished Isotropic Plasma Etcher | Matrix, Tegal, Lam Research, Branson/IPC, PlasmaTherm[1] | — |
| Refurbished PECVD, ALD Equipment | Cambridge, Oxford PlasmaLab , Plasma-Therm, STS/SPTS, AMAT[1] | — |
| Refurbished Mask Aligner | Canon Neutronix PLA501/545, Suss MA200CC, MA8BA8 GEN3, MA8BA8 GEN2, MA8BA8, MA200E[1] | — |
| Refurbished Bonding | SUSS SB6E, SUSS SB8E, EVG 620 BA, EVG EV501, West Bond 7200AR 7400A[1] | — |
| Refurbished Wafer Prober | Electroglas EG 4090u+, EG 4090, EG 2001X, EG 1034X, Cascade PS-21[1] | — |
| Wavelength range | — | 480-800 nm[2] |
| Wavelength range (alternative) | — | 400-800 nm[3] |
| Film thickness range | — | 250 A to 35 µm[2] |
| Film thickness range (alternative) | — | 100A up to 20um (resolution 50A)[3] |
| Maximum film thickness | — | 30µm[3] |
| Measurement spot size | — | 25 µm[2] |
| Measurement spot size (alternative) | — | 25um, down to 100nm at 40X objective[3] |
| Measurement time | — | 0.25 s to 4 s / site[2] |
| Measurement time (alternative) | — | less than 3 seconds[3] |
| Number of layers | — | 3[2] |
| Number of layers (alternative) | — | up to 3 films[3] |
| Detector | — | Linear diode array detector[2] |
| Reproducibility | — | <2 A[2] |
| Wafer size | — | 3"-6"[2] |
| Wafer size (alternative) | — | up to 6"/150mm[3] |
| Objective magnifications | — | 5X, 10X (default), 50X[4] |
| Spot size per objective | — | 5X: 50 µm; 10X: 25 µm; 50X: 5 µm[4] |