Tokyo Electron
TE 8500 P Dry
The Tokyo Electron TE 8500 P is a dry etcher for oxide etching with endpoint detection. The TE 8500 P is a single-chamber system using CF4, CHF3, and He gases. The TE 8500 P is built on an EPROM-based control platform.[1]
What it is
General reference — not yet source-verifiedThe Tokyo Electron TE 8500 P Dry Etch is a dry etching tool for semiconductor manufacturing.
How it works
Where it fits in the process flow
General reference — not yet source-verifiedDry etching sits in the pattern-transfer portion of semiconductor fabrication, after a patterned mask has defined the areas to be opened and before later process steps build on the etched features.
Applications
The TE 8500 P is configured for oxide etch.[1]
What do the numbers mean?
Vacuum & pumping3
- OS: EPROM based system - LD: 2ea, no modification - Pump: 2ea, Kashiyama[1]
Wafer handling1
Gas & chemistry3
Control & software2
Configuration & options6
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the primary advantage of dry etching over wet etching?General reference — not yet source-verified
Dry etching provides superior directionality (anisotropy), enabling the formation of vertical sidewalls and high-aspect-ratio features that are essential for modern integrated circuits. Wet etching is typically isotropic and cannot achieve the same precision for fine patterns.
How does a dry etch system achieve selectivity between different materials?General reference — not yet source-verified
Selectivity is controlled by the choice of process gases and plasma conditions. The chemical reactivity of the plasma is tuned to etch the target material much faster than the underlying or masking layers, preventing unwanted removal of those films.
How is the etch endpoint determined in these systems?General reference — not yet source-verified
Endpoint detection commonly uses optical emission spectroscopy (OES) to monitor the intensity of specific spectral lines from the plasma. When the target layer is fully removed, the concentration of certain species changes, signaling the endpoint. Interferometry and other methods are also used.
What are common challenges in operating a dry etch system?General reference — not yet source-verified
Key challenges include maintaining etch uniformity across the wafer, controlling microloading (where etch rate varies with pattern density), minimizing damage to underlying layers, and managing residues or polymer buildup inside the chamber. Regular cleaning and parameter optimization are required.
Not publicly documented
The following facts about the TE 8500 P Dry are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the TE 8500 P Dry are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the TE 8500 P Dry are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the TE 8500 P Dry are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the TE 8500 P Dry are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the TE 8500 P Dry is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (3)Every fact above is drawn from these public sources
- [1]inventory listing
- [2]Equipment inventory listing
- [3]Equipment inventory listing
Last updated Oct 3, 2026.
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