Tegal
Wafer size
75 mm to 150 mm round substrates; square and rectangular substrates
Introduced
1999
The Tegal 901G incorporates special sensors and electrode designs to address the unique demands of GaAs material processing.[2]
The Tegal 901G is intended for applications including pad, zero layer, non-selective nitride, backside, and planarization etching. The system is also used for oxide, nitride, poly, and III-V materials such as gallium arsenide. The Tegal 901G is utilized in the production of devices for cellular phones and other wireless communication products.[2][1][3]
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The Tegal 901G is specially configured for processing gallium arsenide (GaAs) substrates.[1][3][2]
The Tegal 901G supports pad, zero layer, non-selective nitride, backside, and planarization etching, as well as oxide, nitride, poly, and III-V materials such as GaAs.[2]
The Tegal 901G can accommodate 75 mm to 150 mm round substrates as well as square and rectangular substrates.[2]
The following facts about the 901G are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 901G are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 901G are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 901G are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 901G are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 901G is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 5, 2026.
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