STS
MUC 21 Dry
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
What it is
The STS MUC 21 is a dry etcher. The equipment is manufactured by STS. The model designation is MUC 21.[1]
How it works
General reference — not yet source-verifiedDry etching operates by generating a plasma from reactive gases inside a low-pressure chamber. The plasma contains ions and radicals that react with the exposed material on the wafer surface. The ionized species can be directed to bombard the surface, providing directional etching for anisotropic profiles.
The etcher typically includes a radio frequency (RF) power supply to sustain the plasma, gas delivery system, and vacuum pumping equipment. Process parameters such as gas composition, pressure, RF power, and temperature are controlled to achieve the desired etch rate and profile.
Applications
General reference — not yet source-verifiedDry etchers are used to etch a wide variety of materials including silicon, silicon dioxide, silicon nitride, metals such as aluminum and tungsten, and organic films.
Common applications include creating contact holes, vias, and trenches in dielectric layers, as well as patterning metal interconnects. Specialized processes such as deep reactive ion etching (DRIE) are employed for MEMS fabrication.
What do the numbers mean?
No specifications recorded yet
Be the first to add cited specifications for this tool.
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Not publicly documented
The following facts about the MUC 21 Dry are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No specifications for the MUC 21 Dry are on record.
Answerable by: an OEM datasheet, a cleanroom equipment inventory, or an engineer who operated or installed it
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the MUC 21 Dry are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the MUC 21 Dry are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the MUC 21 Dry are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the MUC 21 Dry are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (1)Every fact above is drawn from these public sources
- [1]Equipment inventory listing
Last updated Sep 28, 2026.
Compare with similar tools
View all →The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.
