Plasma-Therm
790 + RIE
Provisional entry — research in progress
This page was generated automatically from cited public sources and hasn't completed the full research pass yet. Every specification shown carries its source; more detail is added as research completes.
The Plasma-Therm 790 RIE is a reactive ion etch system. The Plasma-Therm 790 RIE is configured for RIE processing of silicon substrates. The Plasma-Therm 790 RIE has a maximum wafer size of 200 mm.[1][2][3]
What it is
The Plasma-Therm 790 is a single-chamber, non-load-locked reactive ion etching system manufactured by Plasma-Therm. The system features a parallel-plate electrode configuration with a showerhead gas distribution. The Plasma-Therm 790 is an open-load system designed for manual substrate loading.[3][6][1][2]
How it works
The Plasma-Therm 790 uses a 13.56 MHz RF generator typically rated at 500 W to sustain the plasma. Process gases are controlled by up to six mass flow controllers (MFCs) with a flow range of 0–100 sccm. The system is pumped by a turbo-molecular pump backed by a mechanical roughing pump to achieve base pressures below 5 mTorr. A recipe-driven control computer automates the etching process, including pump-down, gas stabilization, RF power application, and venting.[5][3][6][1]
Where it fits in the process flow
The Plasma-Therm 790 is configured for etching silicon substrates, as well as dielectrics and metals. The Plasma-Therm 790 is suitable for both research and production environments requiring manual load operation. Typical mask materials allowed on the Plasma-Therm 790 include photoresist and dielectrics.[1][2]
Applications
The Plasma-Therm 790 is typically used for etching silicon oxide, silicon nitride, and silicon. Process gases commonly employed on the Plasma-Therm 790 include sulfur hexafluoride (SF6), trifluoromethane (CHF3), carbon tetrafluoride (CF4), oxygen (O2), and argon (Ar). Some configurations of the Plasma-Therm 790 also support nitrogen (N2).[5][2][6]
What do the numbers mean?
Power & electrical3
Vacuum & pumping2
Wafer handling2
Gas & chemistry3
- Process gases
- SF6, CHF3, CF4, oxygen (O2), argon (Ar); previous gases also listed as AR, N2, O2, SF6, CHF3, CF4[2]
Configuration & options6
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- RF power supply500 W RF power supply[5]
- RF generator500W RF generator[3]
- RF frequency13.56 MHz[3]
- Gas deliveryShower head gas delivery system[3]
- Gas channelsSix MFC gas channels[3]
- Process gasesSF6, CHF3, CF4, oxygen (O2), argon (Ar); previous gases also listed as AR, N2, O2, SF6, CHF3, CF4[2]
- Pressure range< 900 mTorr[2]
- Vacuum systemTurbo pumped vacuum system with roughing pump[3]
Where are the manuals?
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the maximum wafer size the Plasma-Therm 790 can process?
The Plasma-Therm 790 can process substrates up to 200 mm (8 inches) in diameter. Some configurations are specified for 150 mm (6 inch) wafers.[1][2][6][3]
What process gases are available on the Plasma-Therm 790?
Typical process gases include sulfur hexafluoride (SF6), trifluoromethane (CHF3), carbon tetrafluoride (CF4), oxygen (O2), and argon (Ar). Some systems also provide nitrogen (N2).[2][5][6]
What is the RF power specification for the Plasma-Therm 790?
The Plasma-Therm 790 is commonly equipped with a 500 W, 13.56 MHz RF generator. Some configurations have a power range under 350 W.[5][3][6][2]
Not publicly documented
The following facts about the 790 + RIE are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the 790 + RIE are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the 790 + RIE are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the 790 + RIE are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the 790 + RIE are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the 790 + RIE is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No research found yet — worked with this tool? Share what you know.
Sources & citations
Sources (6)Every fact above is drawn from these public sources
- [1]research.engineering.ucdavis.edu — research.engineering.ucdavis.eduresearch.engineering.ucdavis.edu
- [2]cores.research.asu.edu — cores.research.asu.educores.research.asu.edu
- [3]semistarcorp.com — semistarcorp.comsemistarcorp.com
- [4]Inventory photo
- [5]nanofab.ece.cmu.edu — nanofab.ece.cmu.edunanofab.ece.cmu.edu
- [6]Plasmatherm 790 RIE Reactive Ion Etching System - SemiStar Corp. | SemiStar — semistarcorp.comsemistarcorp.com
Last updated Sep 26, 2026.
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