Oxford Instruments
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An ion beam etch system removes material by directing a beam of ions at a surface to sputter or mill exposed areas.
An ion beam etcher is a vacuum process tool that uses directional bombardment rather than wet chemistry to shape thin films and patterned layers.
Ion beam etching is used when directional material removal and controlled profile transfer are needed in microfabrication flows.
Ion beam etch systems are used for precision material removal on patterned surfaces.
Ion beam etching is commonly applied to thin films and other layers that benefit from anisotropic removal.
Documented failure modes, common issues, and field considerations.
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The following facts about the Ion Beam 300 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the Ion Beam 300 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the Ion Beam 300 are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the Ion Beam 300 are not on record.
Answerable by: an engineer who operated it or OEM installation records
The process node or technology generation of the Ion Beam 300 is not on record.
Answerable by: an OEM datasheet or a fab qualification report
No publicly documented compatible parts, consumables, or accessories for the Ion Beam 300 are on record.
Answerable by: an OEM parts catalog or a service engineer
Last updated Oct 6, 2026.
The Applied Materials 0010-47763 is an electrostatic chuck (ESC) assembly used in semiconductor etching processes.
The Applied Materials 0010-16392 is an electrostatic chuck assembly designed for 300 mm wafer processing, featuring a dual electrode configuration.
Oxford Instruments 100 ICP Fluorine is an inductively coupled plasma etcher for fluorine-based etching, supporting cryo DRIE and multiple etch gases including SF6 and C4F8.