Lam Research
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The Lam Research TCP 9600 Metal is a single-wafer, vacuum load-locked, low-pressure metal etch system from the Rainbow platform. The TCP 9600 Metal can be configured for 150mm (6 inch) or 200mm wafers. The TCP 9600 Metal includes a decoupled source quartz (DSQ) strip module for photoresist removal.[1][2][3]

Power
3 (AE RFG 1250)[3]
Vacuum
0 - 100 mTorr[2]
Performance
> 8000 Å/min[1]
Gas delivery
Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, He[2]
The TCP 9600 Metal is part of Lam Research's Rainbow platform. The system is a single-wafer, vacuum load-locked metal etch system that operates at low pressure. Configurations may include a standard mechanical interface (SMIF) for wafer handling, a decoupled source quartz (DSQ) strip module for photoresist removal, and a single process chamber.[7][8][9]
The TCP 9600 Metal operates at process pressures from 0 to 100 mTorr. Top electrode power ranges from 0 to 1250 W, and lower electrode power ranges from 0 to 1200 W. Process temperature is typically 55 °C. The system uses an adjustable monochromator for endpoint detection. The process module includes an electrostatic chuck with helium backside cooling and a fixed-gap 8-inch TCP coil. Endpoint detection uses dual photodiodes at wavelengths of 703 nm and 261.8 nm. The system is equipped with a decoupled source quartz (DSQ) strip module for photoresist removal.[2][3]
The system provides an aluminum etch rate greater than 8000 Å per minute with a non-uniformity of ±15%. System reliability is specified with an uptime typically greater than 85%, a mean time between failures (MTBF) greater than 125 hours, a mean time to change (MTTC) of 12 hours, and a mean time to repair (MTTR) less than 4 hours.[9]
Metal etch systems are used to pattern metal layers deposited on semiconductor wafers. The Lam Research TCP 9600 Metal is a single-wafer etcher that operates in a vacuum load-locked environment, making it suitable for high-volume manufacturing of interconnect structures. Etching typically follows metal deposition and photoresist patterning, and precedes subsequent dielectric deposition or contact formation.
The system supports process gases including Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, and He. The decoupled source quartz (DSQ) strip module removes photoresist after etching.[2]
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The TCP 9600 Metal can be configured for 150 mm (6 inch) or 200 mm wafers.[8]
The system provides an aluminum etch rate greater than 8000 Å per minute.[8][9]
The system supports Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, and He.[8][2]
The system uses dual photodiodes at wavelengths of 703 nm and 261.8 nm, with an adjustable monochromator for endpoint detection.[8][2]
The following facts about the TCP 9600 Metal are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the TCP 9600 Metal are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented variants, configuration options, or revision breakpoints of the TCP 9600 Metal are on record.
Answerable by: an OEM product catalog or an engineer who ordered or specified the tool
The control-system platform and OS era of the TCP 9600 Metal are not on record.
Answerable by: an engineer who operated it or OEM installation records
No publicly documented failure modes or field errata for the TCP 9600 Metal are on record.
Answerable by: a field service engineer, process engineer, or maintenance technician
The process node or technology generation of the TCP 9600 Metal is not on record.
Answerable by: an OEM datasheet or a fab qualification report
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Last updated Oct 3, 2026.
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