Heidelberg Instruments
VPG200
The Heidelberg Instruments VPG200 is a laser pattern generator that produces masks, direct exposes resist on SEMI-standard wafers, and fabricates mask reticles for DUV steppers. The VPG200 uses a 355 nm pulsed Q-switched DPSS laser and achieves a critical dimension of 0.6 µm with its 4 mm focal length write head. The VPG200 supports substrates up to 7 inch x 7 inch square or 200 mm diameter.[1]
Wafer size
100mm
Node / era
600 nm minimum resolution with thin photoresist (< 1 µm)
Optics
500 nm[1]
Control era
Linux workstation
What it is
Heidelberg Instruments VPG200 is a laser pattern generator developed by Heidelberg Instruments GmbH in Germany. The system produces masks for use with mask aligners, performs direct exposure of resist on SEMI-standard wafers, and fabricates mask reticles for DUV steppers.[1]
How it works
The VPG200 exposes resist with a focused 355 nm UV laser beam from a pulsed Q-switched DPSS laser, optimized for high-speed dense pattern writing. Image reconstruction is performed by projecting two linear arrays of 1000 pixels combined with mechanical movement of the stage.[1]
The system is equipped with a macro and micro camera behind the same projection optics, enabling manual or automatic detection of alignment markers for top-side overlay exposure. A real-time autofocus system maintains focus during writing.[1]
Three interchangeable write heads with focal lengths of 4 mm, 10 mm, and 20 mm provide different trade-offs between writing speed and magnification. Stage position is controlled by interferometers, and a vacuum chuck accommodates various substrate sizes.[1]
Applications
Typical applications include making masks for microfluidics, MEMS, and optical devices, as well as writing patterns on wafers that require high-alignment accuracy. The system supports multi-design mapping and single-exposure or batch modes.[1]
- Produce masks for use with maskaligner
- Direct exposure of resist on SEMI-standard wafers
- Produce mask reticules for the DUV stepper
- Overlay exposure on an existing pattern (top side alignment only)
Why won't it start?
Documented failure modes, common issues, and field considerations.
- Sensitive to airborne solvent contamination on optical elements
- SU8 thicker than 50 µm without manual edge bead removal will contaminate nozzle and internal optics
- Exposure of AZ10XT at any thickness is forbidden to avoid resist particles projection directly on the front lens
- Overlay exposure with top side alignment requires precise wafer flat pre-alignment with a maximum tolerance of ± 10 mrad
What do the numbers mean?
Power & electrical1
Vacuum & pumping2
Wafer handling10
- Supported substrates
- Masks and reticules (4, 5, 6, 7 inch) and wafer (100 and 150 mm SEMI-standard) cassette station[1]
- Substrate handling
- Cassette station for masks and reticles (4, 5, 6, 7 inch) and wafers (100 and 150 mm SEMI-standard)[1]
- Substrate handling
- Masks and reticules (4, 5, 6, 7 inch) and wafer (100 and 150mm SEMI-standard) cassette station; batch processing up to 20 5" masks or 25 wafers[1]
- Alignment
- 2 cameras: macro and micro for manual or automatic detection of alignment markers (top side only); overlay exposure with top side alignment requires wafer flat pre-alignment with maximum tolerance of ±10 mrad[1]
Gas & chemistry2
- Resolution (minimum)
- Approximately 600 nm with thin photoresist (< 1 µm) for 4 mm write head[1]
Optics & imaging19
Dimensions & facilities5
Configuration & options10
- Imaging method
- Projection of two linear arrays of 1000 pixels combined with mechanical stage movement[1]
- Writing time (5 inch x 5 inch square, with handling)
- 7 min (4 mm head), 18 min (10 mm head), 65 min (20 mm head)[1]
- Image reconstruction
- Projection of two linear arrays of 1000 pixels combined with mechanical movement of the stage[1]
- Writing time with handling (5"x5" sq. 110x110 mm)
- 7, 18, 65 min for 4, 10, 20 mm write heads[1]
Vintage & configurations
Control-system eraLinux workstation[1]
Documented models & variants
| Designation | Generation | Vintage | Changes | Source |
|---|---|---|---|---|
| VPG200 with 4 mm Write Head | — | — | Critical dimension 0.6 µm, pattern edge roughness max 90 nm, alignment accuracy < 300 nm | epfl.ch[1] |
| VPG200 with 10 mm Write Head | — | — | Critical dimension 0.9 µm, pattern edge roughness max 140 nm, alignment accuracy < 400 nm | epfl.ch[1] |
| VPG200 with 20 mm Write Head | — | — | Critical dimension 2.0 µm, pattern edge roughness max 250 nm, alignment accuracy < 800 nm | epfl.ch[1] |
What replaced it?
Related models
- siblingHeidelberg Instruments MLA150— The source mentions the MLA150 as another Heidelberg laser writer installed in the CMi clean room; the Himt convert interface is similar for both. The MLA150 is mentioned as an alternative for exposing AZ10XT at 405 nm, which is forbidden on the VPG200.source[1]
What does it need to run?
Site utility requirements, footprint, and infrastructure needed to install and operate this tool. Sourced from public records.
- Stage systemPosition control with interferometers, chuck with vacuum for various substrate sizes[1]
- Resolution (minimum)Approximately 600 nm with thin photoresist (< 1 µm) for 4 mm write head[1]
- Stage systemStage system, position control with interferometers, chuck with vacuum for various substrate sizes[1]
- ResolutionMinimum about 600 nm with thin photoresist thickness (<1 µm)[1]
- TypeVolume Pattern Generator (laser pattern generator)[1]
Where are the manuals?
Publicly hosted documents referencing this tool, linked at their original location. Hosted by the linked institutions — availability may change.
- Conversion ManualManualepfl.ch
Generated from public-source data on file. Enter your email to access — nothing is published; details are routed privately.
Not publicly documented
Field notes
No research found yet — worked with this tool? Share what you know.
Frequently asked questions
What is the exposure wavelength of the VPG200?
The exposure source is a 355 nm wavelength pulsed Q-switched DPSS laser.[1]
What is the minimum feature size achievable?
The minimum feature size is 500 nm.[1]
What substrate sizes does the VPG200 support?
Maximum substrate size is 7 inches by 7 inches square or 200 mm diameter. The cassette station accepts masks and reticles of 4, 5, 6, and 7 inches, and wafers of 100 mm and 150 mm SEMI-standard.[1]
What are the alignment accuracy specifications?
Alignment accuracy is <300 nm, <400 nm, and <800 nm for the 4 mm, 10 mm, and 20 mm write heads respectively.[1]
Which input file formats does the VPG200 accept?
The system supports cif, gdsii, dxf, and gerber design files.[1]
What is the batch processing capacity of the VPG200?
Batch processing capacity is up to twenty 5-inch masks or twenty-five wafers per run.[1]
Not publicly documented
The following facts about the VPG200 are absent from this record as of this revision. First-hand knowledge or a citation closes a gap; every submission is reviewed before publication.
No publicly documented production dates or lifecycle milestones (introduction, end of production, EOL) for the VPG200 are on record.
Answerable by: OEM historical records or a trade-press announcement
No publicly documented compatible parts, consumables, or accessories for the VPG200 are on record.
Answerable by: an OEM parts catalog or a service engineer
Sources & citations
Sources (1)Every fact above is drawn from these public sources
- [1]epfl.ch — epfl.chepfl.ch
Last updated Oct 8, 2026.
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