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Comparison ledger

EHPI 500versusEHPI 500 Medium Current

Varian EHPI 500, Varian EHPI 500 Medium Current, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
EHPI 500Varian
OEMVarianVarian
CategoryIon ImplantationIon Implantation
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones—2001 Vintage
Control system——
Generation——
FamilyVarian EHPI 500Varian EHPI 500
Specifications
ConfigurationMedium Current[1]5 Wire[6]
Tool typeMedium current ion implanter[2]Medium current implanter[7]
Energy range (single charge, X+)5 – 260 keV[2]—
Energy range (extended)up to 780 keV[2]—
Maximum wafer size200 mm (8 in)[2]—
Minimum feature size0.18 µm[2]—
ThroughputHighest industry throughput among medium current implanters (10% higher maximum throughput than previous E-series)[2]—
Upgrade / ExtensionsBDM (Beam Drift Monitors)[3]—
Consumables at end of lifetimesource electrode[3]—
Contamination KnownBF3, ASH 3, PH 3[3]—
Energy rangeup to 780 keV[2]—
Wafer sizeup to 200 mm[2]8 inch[6]
Throughput increase10% higher maximum throughput[2]—
ManufacturerVarian[4]—
ModelEHPI 500[4]EHPI 500[6]
Equipment typeImplanter[4]—
Process classMedium current ion implanter[1]—
Expanded energy rangeup to 780 keV[2]—
Maximum throughput change10% higher maximum throughputs[2]—
Feature size capabilitydown to 0.18 micron[2]—
Wafer size capabilityup to 200mm[2]—
Phase—3 Phase[6]
OEM—Varian[6]
Application—Ion implantation[7]
Power—3 Phase[6]
Electrical configuration—5 Wire[6]
Line frequency—50/60 Hz[6]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]web.archive.orgweb.archive.org
  3. [3]inventory listing
  4. [4]Equipment inventory listing
  5. [5]Equipment inventory listing
  6. [6]inventory listing
  7. [7]waferpedia.comwaferpedia.com