Comparison ledger
Tegal 901e, Tegal 903e, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 901eTegal | 903eTegal |
|---|---|---|
| OEM | Tegal | Tegal |
| Category | Etch | Etch |
| Wafer size | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side | 75 mm to 150 mm round substrates; rectangular substrates from 100 mm to 125 mm on a side |
| Process node | down to 0.5 micron | — |
| Introduced | 2000 | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2000 sale announced · 2001 order announced |
| Control system | — | — |
| Generation | 900 Series | — |
| Family | Tegal 901e | Tegal 903e |
| Specifications | ||
| Type | diode plasma etcher[1] | — |
| Fixed electrode gap | 38 mm[1] | — |
| Round substrate handling | 75 mm to 150 mm round silicon and GaAs substrates[1] | — |
| Rectangular substrate handling | rectangular substrates from 100 mm to 125 mm on a side[1] | — |
| Design-rule suitability | best suited for technology design rules down to 0.5 micron[1] | — |
| Electrode gap | 38 mm fixed[1] | — |
| Round substrate size | 75 mm to 150 mm[1] | — |
| Rectangular substrate size | 100 mm to 125 mm on a side[1] | — |
| Best suited design rules | Down to 0.5 micron[1] | — |
| Wafer size | Wafer Size Range[2] | — |
| Phase | Power Requirements 230 V 16.0 A 50/60 Hz 1 Phase[2] | — |
| Tool type | — | diode plasma etch tool[3] |
| Substrate diameter range | — | 75 mm to 150 mm round silicon and gallium arsenide (GaAs) substrates[3] |
| Substrate format | — | rectangular substrates from 100 mm to 125 mm on a side[3] |
| Wafer/substrate capacity | — | 75 mm to 150 mm round substrates[3] |
| Rectangular substrate capacity | — | 100 mm to 125 mm on a side[3] |
| Configured form | — | "through the wall" configuration[5] |
| Application | — | etching oxide contacts[3] |
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