Waferpedia

Comparison ledger

11600 SRDversusR1

Semitool 11600 SRD, YES R1, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
11600 SRDSemitool
R1YES
OEMSemitoolYES
CategoryWet Processing / CleanWet Processing / Clean
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle—Legacy
Lifecycle milestones——
Control system——
Generation——
FamilySemitool 11600 SRDYES R1
Cited variants—
Specifications
ConfigurationCeramic[2]—
ManufacturerSemitool[2]—
Model11600 SRD[2]—
Equipment typeSpin Rinse Dryer[2]—
Plasma clean benchmark—5 minute Argon plasma clean[1]
Referenced use—Industry standard for 15 years[1]
Input power / rating—120 V, 60 Hz, 1.4 A, 175 W[3]
Controller—Y.E.S. ‘Lark’ Logical Sequencer[3]
Plasma power source—Plasma-Therm PE-1000, ~1 kW, ~50 kHz, 115 VAC[3]
Matching network—Advanced Energy LM-5K manual transformer[3]
Vacuum pump—Fisher Scientific Maxima C Plus Model M2C, KF-16 inlet[3]
Process gases—Ar or O2[4]
Chamber temperature range—25–80 °C (typical, from plasma heat)[4]
Maximum substrate size—12 inch[4]
Sample size range—Small pieces up to 12 in x 12 in x 4 in[4]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]web.archive.orgweb.archive.org
  2. [2]inventory listing
  3. [3]nfc.arizona.edunfc.arizona.edu
  4. [4]nnci.netnnci.net