Waferpedia

Comparison ledger

plasmapro-ngp80-rieversus720/740

Oxford Instruments plasmapro-ngp80-rie, Plasma-Therm 720/740, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
plasmapro-ngp80-rieOxford Instruments
720/740Plasma-Therm
OEMOxford InstrumentsPlasma-Therm
CategoryEtchEtch
Wafer size200mm200mm
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyOxford Instruments plasmapro-ngp80-riePlasma-Therm 720/740
Cited variants—
  • 720 (right chamber)[1]
  • 740 (left chamber)[1]
Specifications
Equipment nameOxford NGP80 RIE[2]—
Tag/aliasOxford-PlasmaPro-NGP80-RIE[2]—
Process typeplasma etch[2]—
Etch chemistryCHF3/Ar plasma[3]—
Process temperature20°C[3]—
Typical applicationEtching of SiO2 hard mask[3]—
plasma chemistryCHF3/Ar plasma[3]—
useEtching SiO2 hard mask[3]—
system type—dual chamber RIE loadlocked system[1]
chemistry—chlorine and fluorine based chemistry[1]
left chamber designation—740 (left chamber), designated Au exposure system[1]
right chamber designation—720 (right chamber), designated for chlorine and fluorine based etching of 2D materials and perovskites[1]
wafer capacity—up to 200mm diameter wafers[1]
Chemistry—chlorine and fluorine based[1]
Max wafer diameter—200mm[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]cnf.cornell.educnf.cornell.edu
  2. [2]confluence.nanofab.ualberta.caconfluence.nanofab.ualberta.ca
  3. [3]discovery.ucl.ac.ukdiscovery.ucl.ac.uk
  4. [4]eprints.gla.ac.ukeprints.gla.ac.uk