Comparison ledger
Oxford Instruments Plasmalab 80 Plus, Oxford Instruments PlasmaPro80, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Plasmalab 80 PlusOxford Instruments | PlasmaPro80Oxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments Plasmalab 80 | Oxford Instruments PlasmaPro80 |
| Cited variants | — | |
| Specifications | ||
| Tool ID | DE-04[2] | — |
| Type | Reactive Ion Etching (RIE)[2] | — |
| Design | compact open-loading tool[2] | — |
| RF generator | 600W[2] | — |
| Wafer capacity | up to 200mm wafers[2] | — |
| Process gases | CF4, Ar, O2, SF6, CHF3[2] | CHF3, SF6, O2, Ar[1] |
| Suitability | R&D or small-scale production[2] | — |
| RF power | 600W[2] | — |
| Maximum wafer size | 200mm[2] | 200 mm[1] |
| Tool type | Reactive Ion Etching (RIE)[2] | RIE dry etcher[1] |
| Wafer size | Up to 200mm[2] | 100mm wafers[1] |
| Loading type | Open load[2] | — |
| -Process | PECVD | — |
| -Voltage | 208 VAC, 3 Phase | — |
| -Equipment component | Main body | — |
| Description | Open load reactive ion etch system[3] | — |
| Wafer size designed for | 100 mm[3] | — |
| Wafer size maximum | 200 mm[3] | — |
| Platen size | 238 mm[3] | — |
| Power range | < 270 W[3] | — |
| Etch targets | Compound semiconductors and metals[3] | — |
| OEM | — | Oxford Instruments[1] |
| Model | — | PlasmaPro80[1] |
| Chemistry | — | fluorine chemistry[1] |
| Maximum power | — | 300 W @ 13.56 MHz[1] |
| Load system | — | Open-load system (no load lock)[1] |
| Wafer handling | — | chips to wafer up to 200mm[1] |
| Applications | — | hBN, SiGe, graphite and graphene soft etching[1] |
| Endpoint detection | — | Laser reflectometry/interferometry end-point-detection[1] |
| Process type | — | RIE (Reactive Ion Etching), dry etcher[1] |
| Wafer size (max) | — | 200 mm[1] |
| Loading design | — | Open loading design (quick wafer loading/unloading)[4] |
| Wafer temperature control | — | Superior wafer temperature uniformity[4] |
| Compliance standards | — | Semi S2/S8[4] |
| Process gases (RIE 1) | — | CHF3, SF6, O2, Ar[1] |
| Process gases (RIE 2) | — | CF4, CHF3, SF6, O2, Ar[1] |
| Wafer capacity (RIE 2) | — | 100 mm wafers only, no chips[1] |
| Endpoint detection (RIE 2) | — | Laser reflectometry/interferometry[1] |
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